Global Patent Index - EP 2883241 A4

EP 2883241 A4 20160323 - METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT AND ETCHING LIQUID

Title (en)

METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT AND ETCHING LIQUID

Title (de)

VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERSUBSTRATPRODUKTS UND EINER ÄTZFLÜSSIGKEIT

Title (fr)

PROCÉDÉ DE PRODUCTION D'UN PRODUIT CONSTITUÉ D'UN SUBSTRAT SEMI-CONDUCTEUR ET LIQUIDE DE GRAVURE

Publication

EP 2883241 A4 20160323 (EN)

Application

EP 13827735 A 20130724

Priority

  • JP 2012179042 A 20120810
  • JP 2012283429 A 20121226
  • JP 2013070675 W 20130724

Abstract (en)

[origin: WO2014024737A1] A method of producing a semiconductor substrate product, having the steps of: providing a semiconductor substrate having two or more impurity-containing silicon layers and a silicon oxide layer, each of the impurity-containing silicon layers containing a different impurity from one another; applying an etching liquid onto the semiconductor substrate, the etching liquid comprising water, a hydrofluoric acid compound, and an anionic compound; and selectively etching the silicon oxide layer.

IPC 8 full level

H01L 21/311 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)

CPC (source: EP)

H01L 21/31111 (2013.01); H01L 29/66545 (2013.01); H01L 29/66537 (2013.01); H01L 29/6659 (2013.01); H01L 29/7833 (2013.01); H01L 29/7848 (2013.01)

Citation (search report)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

WO 2014024737 A1 20140213; EP 2883241 A1 20150617; EP 2883241 A4 20160323; JP 2014057039 A 20140327; TW 201412948 A 20140401; TW I625382 B 20180601

DOCDB simple family (application)

JP 2013070675 W 20130724; EP 13827735 A 20130724; JP 2012283429 A 20121226; TW 102127194 A 20130730