Global Patent Index - EP 2887387 A1

EP 2887387 A1 20150624 - Semiconductor device and associated method

Title (en)

Semiconductor device and associated method

Title (de)

Halbleitervorrichtung und zugehöriges Verfahren

Title (fr)

Dispositif semi-conducteur et procédé associé

Publication

EP 2887387 A1 20150624 (EN)

Application

EP 13199196 A 20131220

Priority

EP 13199196 A 20131220

Abstract (en)

The invention relates to a semiconductor device and an associated method for fabricating the semiconductor device. The device comprises: a substrate having a contact surface and a back surface separated by a total distance; a vertical device formed in the substrate and having first and second terminals on the contact surface; an isolation trench extending the total distance through the substrate between the contact surface and the back surface to electrically isolate the vertical device; and a terminal separation trench extending from the contact surface into the substrate and arranged to separate and define an electrical conduction path between the first and second terminals of the vertical device.

IPC 8 full level

H01L 21/762 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/732 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01)

CPC (source: EP US)

H01L 21/76224 (2013.01 - EP US); H01L 21/76283 (2013.01 - EP US); H01L 21/84 (2013.01 - EP US); H01L 27/1203 (2013.01 - EP US); H01L 29/0649 (2013.01 - US); H01L 29/0653 (2013.01 - EP US); H01L 29/7809 (2013.01 - EP US); H01L 29/7812 (2013.01 - EP US); H01L 29/7813 (2013.01 - EP US); H01L 2224/24137 (2013.01 - EP); H01L 2224/73267 (2013.01 - EP)

Citation (search report)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

EP 2887387 A1 20150624; CN 104733459 A 20150624; US 2015179735 A1 20150625

DOCDB simple family (application)

EP 13199196 A 20131220; CN 201410803328 A 20141219; US 201414575001 A 20141218