Global Patent Index - EP 2893568 A4

EP 2893568 A4 20160706 - BACK CONTACT LAYER FOR PHOTOVOLTAIC CELLS

Title (en)

BACK CONTACT LAYER FOR PHOTOVOLTAIC CELLS

Title (de)

RÜCKSEITENKONTAKTSCHICHT FÜR FOTOVOLTAIKZELLEN

Title (fr)

COUCHE DE CONTACT ARRIÈRE POUR CELLULES PHOTOVOLTAÏQUES

Publication

EP 2893568 A4 20160706 (EN)

Application

EP 13829761 A 20130813

Priority

  • US 201261682452 P 20120813
  • US 2013054783 W 20130813

Abstract (en)

[origin: WO2014028526A2] A photovoltaic cell structure is disclosed that includes a back contact layer that includes single wall carbon nanotube elements. The single wall carbon nanotube (SWNT) back contact is in electrical communication with an adjacent semiconductor layer and provides a buffer characteristic that impedes elemental metal migration from the back contact into the semiconductor active layers. In one embodiment, the SWNT back contact includes a semiconductor characteristic and a buffer characteristic. In another embodiment, the SWNT back contact further includes a metallic characteristic.

IPC 8 full level

H01L 31/0296 (2006.01)

CPC (source: EP)

H01L 31/022425 (2013.01); H01L 31/03925 (2013.01); H01L 31/03926 (2013.01); H01L 31/073 (2013.01); H01L 51/444 (2013.01); Y02E 10/543 (2013.01)

Citation (search report)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

WO 2014028526 A2 20140220; WO 2014028526 A3 20150716; EP 2893568 A2 20150715; EP 2893568 A4 20160706

DOCDB simple family (application)

US 2013054783 W 20130813; EP 13829761 A 20130813