EP 2898123 A1 20150729 - METHOD FOR FORMING AN EPITAXIAL SILICON LAYER
Title (en)
METHOD FOR FORMING AN EPITAXIAL SILICON LAYER
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER EPITAKTISCHEN SILICIUMSCHICHT
Title (fr)
PROCEDE DE FORMATION D'UNE COUCHE DE SILICIUM EPITAXIEE
Publication
Application
Priority
- FR 1258913 A 20120924
- IB 2013058770 W 20130923
Abstract (en)
[origin: WO2014045252A1] The invention relates to a method for forming a crystallised silicon layer (2) having a crystallite size higher than or equal to 100 µm, by means of epitaxial growth in a vapour phase, on the surface of at least one silicon substrate (1), comprising at least the steps consisting in: (i) providing a silicon substrate (1) having a particle size higher than or equal to 100 µm and comprising a metal impurities content of between 0 ppb and 1 ppm by weight; and (ii) forming said silicon layer on the surface of said substrate heated to a temperature of between 1000 and 1300 °C, by decomposition of at least one silicon precursor by means of an inductive plasma torch (4), the surface (11) of said substrate for supporting the silicon layer (2) being positioned close to the outlet of the plasma torch in step (ii).
IPC 8 full level
C30B 23/02 (2006.01); C23C 16/24 (2006.01); C23C 16/513 (2006.01); C30B 23/06 (2006.01); C30B 25/10 (2006.01); C30B 25/18 (2006.01); C30B 25/20 (2006.01); C30B 28/14 (2006.01); C30B 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/205 (2006.01); H01L 31/18 (2006.01)
CPC (source: EP US)
C23C 16/24 (2013.01 - EP US); C23C 16/513 (2013.01 - EP US); C30B 25/105 (2013.01 - EP US); C30B 25/16 (2013.01 - EP US); C30B 25/18 (2013.01 - EP US); C30B 25/20 (2013.01 - EP US); C30B 29/06 (2013.01 - EP US); H01L 21/02381 (2013.01 - EP US); H01L 21/02532 (2013.01 - EP US); H01L 21/02595 (2013.01 - EP US); H01L 21/0262 (2013.01 - EP US); H01L 31/1804 (2013.01 - EP US); H05H 1/30 (2013.01 - EP US); Y02E 10/547 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)
Citation (search report)
See references of WO 2014045252A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2014045252 A1 20140327; CN 104781455 A 20150715; EP 2898123 A1 20150729; FR 2995913 A1 20140328; FR 2995913 B1 20141010; US 2015299897 A1 20151022
DOCDB simple family (application)
IB 2013058770 W 20130923; CN 201380058621 A 20130923; EP 13798753 A 20130923; FR 1258913 A 20120924; US 201314430800 A 20130923