Global Patent Index - EP 2913839 A1

EP 2913839 A1 20150902 - Cryogenic silicon-based surface-electrode trap and method of manufacturing such a trap

Title (en)

Cryogenic silicon-based surface-electrode trap and method of manufacturing such a trap

Title (de)

Kryogene, siliziumbasierte Oberflächenelektrodenfalle und Verfahren zur Herstellung solch einer Falle

Title (fr)

Piège cryogénique avec électrode de surface à base de silicium et procédé de fabrication d'un tel piège

Publication

EP 2913839 A1 20150902 (EN)

Application

EP 14157348 A 20140228

Priority

EP 14157348 A 20140228

Abstract (en)

A system for trapping charged or polar particles is provided. The system includes a cryostat and a surface-electrode trap for trapping charged or polar particles. The surface-electrode trap includes a silicon substrate having a front surface and a back surface. Planar electrodes are formed on the front surface of the silicon substrate and configured to generate a trapping potential for trapping the charged or polar particles above the planar electrodes. The planar electrodes include a first radio frequency electrode extending substantially parallel to the front surface of the substrate, and a first direct current electrode extending substantially parallel to the front surface of the substrate and being adjacent to, and electrically insulated from, the first radio frequency electrode. The surface-electrode trap is positioned in the cryostat, and the cryostat is configured for cooling the surface-electrode trap to or below a temperature of 150 K.

IPC 8 full level

H01J 49/00 (2006.01); G06N 99/00 (2010.01)

CPC (source: EP US)

G06N 10/00 (2019.01 - EP); H01J 49/422 (2013.01 - US)

Citation (applicant)

Citation (search report)

  • [A] US 2011290995 A1 20111201 - KUMPH MUIR [AT]
  • [XA] ALLCOCK D T C ET AL: "Heating rate and electrode charging measurements in a scalable, microfabricated, surface-electrode ion trap", APPLIED PHYSICS B ; LASERS AND OPTICS, SPRINGER, BERLIN, DE, vol. 107, no. 4, 12 November 2011 (2011-11-12), pages 913 - 919, XP035077413, ISSN: 1432-0649, DOI: 10.1007/S00340-011-4788-5
  • [IA] MERRILL J TRUE ET AL: "Demonstration of integrated microscale optics in surface-electrode ion traps", NEW JOURNAL OF PHYSICS, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 13, no. 10, 4 October 2011 (2011-10-04), pages 103005-1 - 103005-1, XP020212168, ISSN: 1367-2630, DOI: 10.1088/1367-2630/13/10/103005
  • [A] GANDOLFI D ET AL: "Compact radio-frequency resonator for cryogenic ion traps", REVIEW OF SCIENTIFIC INSTRUMENTS, AIP, MELVILLE, NY, US, vol. 83, no. 8, 30 August 2012 (2012-08-30), pages 84705-1 - 84705-6, XP012162567, ISSN: 0034-6748, [retrieved on 20120830], DOI: 10.1063/1.4737889
  • [A] CLARK ROBERT ET AL: "A cryogenic surface-electrode elliptical ion trap for quantum simulation", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 109, no. 7, 8 April 2011 (2011-04-08), pages 76103-1 - 76103-3, XP012148042, ISSN: 0021-8979, DOI: 10.1063/1.3565053
  • [A] JAROSLAW LABAZIEWICZ ET AL: "Suppression of Heating Rates in Cryogenic Surface-Electrode Ion Traps", PHYSICAL REVIEW LETTERS, vol. 100, no. 1, 11 January 2008 (2008-01-11), pages 013001-1 - 013001-4, XP055132388, ISSN: 0031-9007, DOI: 10.1103/PhysRevLett.100.013001
  • [A] ANTOHI P ET AL: "Cryogenic ion trapping systems with surface-electrode traps", REVIEW OF SCIENTIFIC INSTRUMENTS, AIP, MELVILLE, NY, US, vol. 80, no. 1, 7 January 2009 (2009-01-07), pages 13103-1 - 13103-9, XP012127862, ISSN: 0034-6748, DOI: 10.1063/1.3058605
  • [T] MICHAEL NIEDERMAYR ET AL: "Cryogenic silicon surface ion trap", ARXIV:1403.5208V1, 20 March 2014 (2014-03-20), pages 1 - 12, XP055132048, Retrieved from the Internet <URL:http://arxiv.org/abs/1403.5208> [retrieved on 20140729]

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

EP 2913839 A1 20150902; WO 2015128438 A1 20150903

DOCDB simple family (application)

EP 14157348 A 20140228; EP 2015054086 W 20150226