EP 2926384 A1 20151007 - THIN LAYER CAPACITORS WITH LARGE SCALE INTEGRATION
Title (en)
THIN LAYER CAPACITORS WITH LARGE SCALE INTEGRATION
Title (de)
DÜNNSCHICHTKONDENSATOREN MIT HOHER INTEGRATIONSDICHTE
Title (fr)
CONDENSATEURS À COUCHE MINCE PRÉSENTANT UNE DENSITÉ D'INTÉGRATION ÉLEVÉE
Publication
Application
Priority
- DE 102013202252 A 20130212
- EP 2014051478 W 20140127
Abstract (en)
[origin: WO2014124796A1] The present invention relates to a two‑ply, dielectric layer for a thin‑layer capacitor, characterized in that a) the bottom, first ply (4) comprises a self‑assembled monolayer containing phosphorus oxo compounds and b) the top, second ply (5) comprises a planarization layer containing guanidinium compounds.
IPC 8 full level
C07C 277/00 (2006.01); C07C 279/00 (2006.01); C07F 9/38 (2006.01); H01B 3/18 (2006.01); H01G 4/14 (2006.01); H01G 4/33 (2006.01); H01L 49/02 (2006.01); H05K 1/16 (2006.01)
CPC (source: EP US)
C07F 9/3808 (2013.01 - EP US); H01B 3/30 (2013.01 - EP US); H01G 4/06 (2013.01 - EP US); H01G 4/14 (2013.01 - EP US); H01G 4/33 (2013.01 - EP US); H01G 9/0032 (2013.01 - US); H01G 9/0036 (2013.01 - US); H01G 9/04 (2013.01 - US); H01G 9/07 (2013.01 - US); H01L 28/40 (2013.01 - EP US); H05K 1/181 (2013.01 - US); H05K 1/162 (2013.01 - EP US); H05K 2201/10015 (2013.01 - US)
Citation (search report)
See references of WO 2014124796A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2014124796 A1 20140821; CN 105122490 A 20151202; DE 102013202252 A1 20140828; EP 2926384 A1 20151007; US 2015380168 A1 20151231
DOCDB simple family (application)
EP 2014051478 W 20140127; CN 201480020909 A 20140127; DE 102013202252 A 20130212; EP 14702496 A 20140127; US 201414767483 A 20140127