Global Patent Index - EP 2929556 B1

EP 2929556 B1 20180411 - PROCESS FOR PRODUCING A GALLIUM ARSENIDE SUBSTRATE

Title (en)

PROCESS FOR PRODUCING A GALLIUM ARSENIDE SUBSTRATE

Title (de)

VERFAHREN ZUR HERSTELLUNG EINES GALLIUMARSENIDSUBSTRATS

Title (fr)

PROCÉDÉ DE PRODUCTION D'UN SUBSTRAT D'ARSÉNIURE DE GALLIUM

Publication

EP 2929556 B1 20180411 (EN)

Application

EP 14705102 A 20140212

Priority

  • DE 102013002637 A 20130215
  • EP 2014052745 W 20140212

Abstract (en)

[origin: WO2014124980A2] The present invention relates to a novel process for producing a surface-treated gallium arsenide substrate as well as novel provided gallium arsenide substrates as such as well as the use thereof. The improvement of the process according to the invention is based on a particular final surface treatment with an oxidation treatment of at least one surface of the gallium arsenide substrate in dry condition by means of UV radiation and/or ozone gas, a contacting of the at least one surface of the gallium arsenide substrate with at least one liquid medium and a Marangoni drying of the gallium arsenide substrate. The gallium arsenide substrates provided according to the invention exhibit a so far not obtained surface quality, in particular a homogeneity of surface properties, which is detectable by means of optical surface analyzers, specifically by means of ellipsometric lateral substrate mapping for the optical contact-free quantitative characterization.

IPC 8 full level

H01L 21/02 (2006.01); G01N 21/21 (2006.01)

CPC (source: EP US)

C30B 29/42 (2013.01 - US); G01N 21/211 (2013.01 - EP US); H01L 21/02046 (2013.01 - EP US); H01L 21/02052 (2013.01 - EP US); H01L 21/02054 (2013.01 - EP US); H01L 21/02395 (2013.01 - US); H01L 29/20 (2013.01 - US); C01G 28/005 (2013.01 - US); G01N 2021/178 (2013.01 - EP US); Y10T 428/24355 (2015.01 - EP US)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

DE 102013002637 A1 20140821; CN 104969328 A 20151007; CN 104969328 B 20200710; CN 107634000 A 20180126; CN 107634000 B 20220923; CN 109801836 A 20190524; CN 115101401 A 20220923; EP 2929556 A2 20151014; EP 2929556 B1 20180411; EP 3358601 A2 20180808; EP 3358601 A3 20181128; EP 4057322 A2 20220914; EP 4057322 A3 20221130; JP 2016519033 A 20160630; JP 6345700 B2 20180620; TW 201438092 A 20141001; TW I602236 B 20171011; US 10460924 B2 20191029; US 11170989 B2 20211109; US 2015371844 A1 20151224; US 2018158673 A1 20180607; US 2022028682 A1 20220127; WO 2014124980 A2 20140821; WO 2014124980 A3 20141211

DOCDB simple family (application)

DE 102013002637 A 20130215; CN 201480004737 A 20140212; CN 201710885350 A 20140212; CN 201910045917 A 20140212; CN 202210773543 A 20140212; EP 14705102 A 20140212; EP 18156119 A 20140212; EP 2014052745 W 20140212; EP 22165505 A 20140212; JP 2015557415 A 20140212; TW 103104814 A 20140214; US 201414767603 A 20140212; US 201815886091 A 20180201; US 202117497939 A 20211010