EP 2935645 A1 20151028 - METHOD FOR DEPOSITING SILICON LAYERS
Title (en)
METHOD FOR DEPOSITING SILICON LAYERS
Title (de)
VERFAHREN ZUR ABSCHEIDUNG VON SILICIUMSCHICHTEN
Title (fr)
PROCÉDÉ DE DÉPÔT DE COUCHES DE SILICIUM
Publication
Application
Priority
- DE 102012108250 A 20120905
- EP 2013067150 W 20130816
Abstract (en)
[origin: WO2014037212A1] One embodiment of the invention concerns a method for depositing Si layers on substrates, there being deposited on a substrate in a chemical gas phase process layers of silicon from at least one precursor which is selected from halogenosilane compounds of the general empirical formulae SinX2n and/or SinX(2n+2), in which X is a halogen and n is equal to or greater than 3.
IPC 8 full level
C23C 16/24 (2006.01)
CPC (source: EP)
C23C 16/24 (2013.01)
Citation (search report)
See references of WO 2014037212A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
DE 102012108250 A1 20140306; EP 2935645 A1 20151028; WO 2014037212 A1 20140313
DOCDB simple family (application)
DE 102012108250 A 20120905; EP 13753307 A 20130816; EP 2013067150 W 20130816