Global Patent Index - EP 2935662 A1

EP 2935662 A1 20151028 - PROCESS FOR FABRICATING A THICK CRYSTALLINE LAYER

Title (en)

PROCESS FOR FABRICATING A THICK CRYSTALLINE LAYER

Title (de)

VERFAHREN ZUR HERSTELLUNG EINER DICKEN KRISTALLINEN SCHICHT

Title (fr)

PROCÉDÉ DE FABRICATION D'UNE COUCHE ÉPAISSE CRISTALLINE

Publication

EP 2935662 A1 (FR)

Application

EP 13820824 A

Priority

  • FR 1262736 A
  • FR 2013053146 W

Abstract (en)

[origin: WO2014096690A1] The process comprises steps consisting in: a) implanting ionic species through a substrate comprising, at least on its surface, a crystalline layer (10) of SixGe1-x, so as to form a weakened plane in said layer, bounding a seed film (3); b) depositing an amorphous layer (5) of SiyGe1-y on the seed film (3); c) applying a splitting process so as to obtain a detached structure (8) comprising the seed film (3) and the amorphous SiyGe1-y layer (5) on the one hand, and a negative (4) of the substrate on the other hand; and d) applying, to the detached structure (8), a heat treatment so as to obtain a thick crystalline layer with a thickness larger than 10 microns, which layer is not secured to the negative (4). The invention also relates to a structure comprising a crystalline silicon substrate comprising a seed film and an amorphous silicon layer containing a stressed region comprising implanted ions.

IPC 8 full level

C30B 1/02 (2006.01); C30B 29/06 (2006.01); C30B 29/08 (2006.01); C30B 29/52 (2006.01); C30B 31/22 (2006.01); C30B 33/06 (2006.01)

CPC (source: EP US)

C30B 1/023 (2013.01 - EP); C30B 29/06 (2013.01 - EP); C30B 29/08 (2013.01 - EP); C30B 29/52 (2013.01 - EP); C30B 31/22 (2013.01 - EP); C30B 33/06 (2013.01 - EP); H01L 21/76254 (2013.01 - EP); H01L 31/028 (2013.01 - US); H01L 31/1812 (2013.01 - US); H01L 31/1864 (2013.01 - US); H01L 31/1872 (2013.01 - US); Y02E 10/547 (2013.01 - EP)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

FR 3000109 A1 20140627; FR 3000109 B1 20150116; EP 2935662 A1 20151028; JP 2016509364 A 20160324; US 2015349191 A1 20151203; WO 2014096690 A1 20140626

DOCDB simple family (application)

FR 1262736 A 20121221; EP 13820824 A 20131217; FR 2013053146 W 20131217; JP 2015548716 A 20131217; US 201314654678 A 20131217