EP 2936550 A1 20151028 - SUBSTRATES FOR SEMICONDUCTOR DEVICES
Title (en)
SUBSTRATES FOR SEMICONDUCTOR DEVICES
Title (de)
SUBSTRATE FÜR HALBLEITERBAUELEMENTE
Title (fr)
SUBSTRATS POUR COMPOSANTS SEMICONDUCTEURS
Publication
Application
Priority
- GB 201222798 A 20121218
- US 201261738641 P 20121218
- GB 201310039 A 20130605
- EP 2013075557 W 20131204
Abstract (en)
[origin: WO2014095373A1] A method of fabricating a composite semiconductor component comprising: (i) providing a bowed substrate comprising a wafer of synthetic diamond material having a thickness td, the bowed substrate being bowed by an amount B and comprising a convex face and a concave face; (ii) growing a layer of compound semiconductor material on the convex face of the bowed substrate via a chemical vapour deposition technique at a growth temperature T to form a bowed composite semiconductor component comprising the layer of compound semiconductor material of thickness tsc on the convex face of the bowed substrate, the compound semiconductor material having a higher average thermal expansion coefficient than the synthetic diamond material between the growth temperature T and room temperature providing a thermal expansion mismatch ΔTec; and (iii) cooling the bowed composite semiconductor component, wherein the layer of compound semiconductor material contracts more than the wafer of synthetic diamond material during cooling due to the thermal expansion mismatch ΔTec, wherein B, td, tsc, and ΔTec are selected such that the layer of compound semiconductor material contracts on cooling by an amount which off-sets bowing in the bowed substrate thus pulling the bowed composite semiconductor component into a flat configuration, the layer of compound semiconductor material having a tensile stress after cooling of less than 500 MPa.
IPC 8 full level
H01L 21/20 (2006.01)
CPC (source: EP GB US)
C23C 16/27 (2013.01 - EP US); C30B 25/18 (2013.01 - EP US); C30B 25/183 (2013.01 - EP US); C30B 29/04 (2013.01 - US); C30B 29/36 (2013.01 - EP US); C30B 29/40 (2013.01 - EP US); C30B 29/403 (2013.01 - EP US); C30B 29/406 (2013.01 - EP US); H01L 21/02376 (2013.01 - EP GB US); H01L 21/02428 (2013.01 - EP US); H01L 21/02433 (2013.01 - EP US); H01L 21/02444 (2013.01 - GB); H01L 21/0245 (2013.01 - EP US); H01L 21/02513 (2013.01 - US); H01L 21/02521 (2013.01 - EP US); H01L 21/02538 (2013.01 - EP US); H01L 21/0254 (2013.01 - EP US); H01L 21/0262 (2013.01 - US); H01L 21/2003 (2013.01 - GB); H01L 23/3732 (2013.01 - US); H01L 2924/0002 (2013.01 - EP US)
Citation (search report)
See references of WO 2014095373A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2014095373 A1 20140626; EP 2936550 A1 20151028; EP 2936550 B1 20210519; GB 201321371 D0 20140115; GB 2510468 A 20140806; GB 2510468 B 20160608; JP 2016507450 A 20160310; JP 2017119624 A 20170706; JP 6085371 B2 20170222; US 10023974 B2 20180717; US 2016186362 A1 20160630
DOCDB simple family (application)
EP 2013075557 W 20131204; EP 13815397 A 20131204; GB 201321371 A 20131204; JP 2015548336 A 20131204; JP 2017012812 A 20170127; US 201314648256 A 20131204