EP 2938761 A1 20151104 - DOPING MEDIA FOR THE LOCAL DOPING OF SILICON WAFERS
Title (en)
DOPING MEDIA FOR THE LOCAL DOPING OF SILICON WAFERS
Title (de)
DOTIERMEDIEN ZUR LOKALEN DOTIERUNG VON SILIZIUMWAFERN
Title (fr)
SUBSTANCES DE DOPAGE DESTINÉES AU DOPAGE LOCAL DE TRANCHES DE SILICIUM
Publication
Application
Priority
- EP 12008660 A 20121228
- EP 13005734 A 20131210
- EP 13005735 A 20131210
- EP 13005736 A 20131210
- EP 13005737 A 20131210
- EP 2013003838 W 20131218
- EP 13817883 A 20131218
Abstract (en)
[origin: WO2014101989A1] The invention relates to a novel method for producing printable, high-viscous oxide media and to the use thereof in the production of solar cells.
IPC 8 full level
C30B 31/04 (2006.01); C09D 183/00 (2006.01); C23C 18/12 (2006.01); C23C 18/32 (2006.01); H01L 21/02 (2006.01); H01L 21/22 (2006.01); H01L 21/225 (2006.01); H01L 21/48 (2006.01); H01L 31/0216 (2014.01); H01L 31/0288 (2006.01)
CPC (source: EP US)
C03C 8/00 (2013.01 - US); C09D 183/00 (2013.01 - EP US); C09D 183/04 (2013.01 - EP US); C23C 18/1216 (2013.01 - EP US); C23C 18/122 (2013.01 - EP US); C23C 18/1245 (2013.01 - EP US); C23C 18/1254 (2013.01 - EP US); C23C 18/143 (2019.04 - EP US); C30B 29/06 (2013.01 - EP US); C30B 31/04 (2013.01 - EP US); H01L 21/02129 (2013.01 - EP US); H01L 21/2225 (2013.01 - EP US); H01L 21/2255 (2013.01 - EP US); H01L 21/4867 (2013.01 - EP US); H01L 31/02167 (2013.01 - EP US); H01L 31/02168 (2013.01 - EP US); H01L 31/0288 (2013.01 - EP US); H01L 31/1804 (2013.01 - EP US); H01L 31/186 (2013.01 - US); C03C 2205/00 (2013.01 - US); C23C 18/08 (2013.01 - EP US); C23C 18/10 (2013.01 - EP US); Y02E 10/547 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)
Citation (search report)
See references of WO 2014101989A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2014101989 A1 20140703; CN 104884685 A 20150902; EP 2938761 A1 20151104; JP 2016506630 A 20160303; JP 6383363 B2 20180829; KR 20150103131 A 20150909; SG 10201704400Y A 20170728; SG 11201504937V A 20150730; TW 201439373 A 20141016; TW I607115 B 20171201; US 10134942 B2 20181120; US 2015340541 A1 20151126
DOCDB simple family (application)
EP 2013003838 W 20131218; CN 201380067938 A 20131218; EP 13817883 A 20131218; JP 2015550008 A 20131218; KR 20157020281 A 20131218; SG 10201704400Y A 20131218; SG 11201504937V A 20131218; TW 102148896 A 20131227; US 201314655857 A 20131218