EP 2945908 A1 20151125 - METHOD FOR DEPOSITING POLYCRYSTALLINE SILICONE
Title (en)
METHOD FOR DEPOSITING POLYCRYSTALLINE SILICONE
Title (de)
VERFAHREN ZUR ABSCHEIDUNG VON POLYKRISTALLINEM SILICIUM
Title (fr)
PROCÉDÉ POUR DÉPOSER DU SILICIUM POLYCRISTALLIN
Publication
Application
Priority
- DE 102013200660 A 20130117
- EP 2014050437 W 20140113
Abstract (en)
[origin: WO2014111326A1] The invention relates to a method for separating polycrystalline silicone, comprising passing of a reaction gas comprising a silicon-containing component and hydrogen into a reactor, whereby polycrystalline silicon in the form of rods is deposited, characterized in that upon completion of the deposition the reactor is opened and ventilated for a specific time.
IPC 8 full level
C01B 33/035 (2006.01)
CPC (source: EP US)
C01B 33/035 (2013.01 - EP US); H01L 21/02532 (2013.01 - US); H01L 21/02595 (2013.01 - US); H01L 21/0262 (2013.01 - US)
Citation (search report)
See references of WO 2014111326A1
Citation (examination)
EP 2105409 A1 20090930 - MITSUBISHI MATERIALS CORP [JP]
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
DE 102013200660 A1 20140717; CN 104918883 A 20150916; CN 104918883 B 20170616; EP 2945908 A1 20151125; JP 2016506357 A 20160303; JP 6046269 B2 20161214; KR 101731410 B1 20170428; KR 20150093209 A 20150817; MY 170523 A 20190809; SA 515360699 B1 20180226; TW 201429869 A 20140801; TW I505988 B 20151101; US 2015364323 A1 20151217; US 9620359 B2 20170411; WO 2014111326 A1 20140724
DOCDB simple family (application)
DE 102013200660 A 20130117; CN 201480005255 A 20140113; EP 14700836 A 20140113; EP 2014050437 W 20140113; JP 2015552062 A 20140113; KR 20157017896 A 20140113; MY PI2015001482 A 20140113; SA 515360699 A 20150628; TW 103100627 A 20140108; US 201414761523 A 20140113