EP 2955844 A1 20151216 - SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Title (en)
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Title (de)
HALBLEITERBAUELEMENT UND ELEKTRONISCHE VORRICHTUNG
Title (fr)
DISPOSITIF SEMI-CONDUCTEUR ET APPAREIL ÉLECTRONIQUE
Publication
Application
Priority
JP 2014114063 A 20140602
Abstract (en)
The manufacturing yield of a semiconductor device is improved. There is provided a semiconductor device of a cascode coupling system, which is equipped with a plurality of normally-on junction FETs using as a material, a substance larger in bandgap than silicon, and a normally-off MOSFET using silicon as a material. At this time, the semiconductor chip has a plurality of junction FET semiconductor chips (semiconductor chip CHPO and semiconductor chip CHP1) formed with the junction FETs in a divided fashion, and a MOSFET semiconductor chip (semiconductor chip CHP2) formed with the MOSFET.
IPC 8 full level
H03F 1/22 (2006.01); H01L 21/82 (2006.01); H01L 27/02 (2006.01)
CPC (source: EP US)
H01L 21/8213 (2013.01 - EP US); H01L 23/4952 (2013.01 - EP US); H01L 23/49562 (2013.01 - EP US); H01L 23/49575 (2013.01 - EP US); H01L 23/49844 (2013.01 - US); H01L 25/18 (2013.01 - EP US); H01L 29/1608 (2013.01 - US); H01L 29/2003 (2013.01 - US); H01L 29/78 (2013.01 - US); H01L 29/808 (2013.01 - US); H03F 1/223 (2013.01 - EP US); H03F 1/226 (2013.01 - EP US); H01L 23/3107 (2013.01 - EP US); H01L 2224/02166 (2013.01 - EP); H01L 2224/0603 (2013.01 - EP US); H01L 2224/32145 (2013.01 - EP); H01L 2224/48091 (2013.01 - EP US); H01L 2224/48111 (2013.01 - EP); H01L 2224/48137 (2013.01 - EP US); H01L 2224/48247 (2013.01 - EP US); H01L 2224/48472 (2013.01 - EP US); H01L 2224/49111 (2013.01 - EP); H01L 2224/49113 (2013.01 - EP US); H01L 2924/13091 (2013.01 - EP US); H01L 2924/181 (2013.01 - EP US)
Citation (applicant)
- WO 2013046439 A1 20130404 - RENESAS ELECTRONICS CORP [JP], et al
- US 6535050 B2 20030318 - BAUDELOT ERIC [DE], et al
Citation (search report)
- [XYI] US 2001050589 A1 20011213 - BAUDELOT ERIC [DE], et al
- [YDA] WO 2013046439 A1 20130404 - RENESAS ELECTRONICS CORP [JP], et al & EP 2763160 A1 20140806 - RENESAS ELECTRONICS CORP [JP]
- [YA] US 2013335134 A1 20131219 - KANAZAWA TAKAMITSU [JP], et al
- [A] US 2004130021 A1 20040708 - SRIDEVAN SRIKANT [US]
- [A] US 2011199148 A1 20110818 - IWAMURA TAKAHIRO [JP]
- [A] EP 2736171 A1 20140528 - NXP BV [NL]
- [A] US 2005225373 A1 20051013 - MORITA KOICHI [JP]
- [A] US 2003042538 A1 20030306 - KUMAR RAJESH [JP], et al
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 2955844 A1 20151216; CN 105280625 A 20160127; JP 2015228445 A 20151217; JP 6374225 B2 20180815; TW 201611189 A 20160316; TW I656606 B 20190411; US 10607978 B2 20200331; US 2016211246 A1 20160721; US 2018166430 A1 20180614; US 9960153 B2 20180501
DOCDB simple family (application)
EP 15167738 A 20150514; CN 201510293629 A 20150601; JP 2014114063 A 20140602; TW 104116236 A 20150521; US 201514733776 A 20150608; US 201815894564 A 20180212