Title (en)

MONOLITHIC SEMI-CONDUCTOR SUBSTRATE BASED ON SILICON, DIVIDED INTO SUB-CELLS

Title (de)

MONOLITHISCHES HALBLEITERSUBSTRAT AUF DER BASIS VON SILICIUM, IN UNTERZELLEN UNTERTEILT

Title (fr)

SUBSTRAT SEMI-CONDUCTEUR MONOLITHIQUE À BASE DE SILICIUM, DIVISÉ EN SOUS-CELLULES

Publication

EP 2965350 A1 20160113 (FR)

Application

EP 14713264 A 20140306

Priority

• FR 1352097 A 20130308
• IB 2014059498 W 20140306

Abstract (en)

[origin: WO2014136083A1] The invention relates to a monolithic semi-conductor substrate (10) based on silicon, vertically divided into sub-cells that are isolated from each other, comprising a type-p or type-n silicon base (1) having an interstitial oxygen concentration of between 1017 and 2.1018 cm"3, and including, on at least one of the faces thereof, n+ and/or p+ overdoped boxes that are non-contiguous in relation to each other, characterised in that at least one substrate region, inserted between two successive boxes and extending over the entire thickness of the substrate, is an electrical insulation region (3) having a thermal donor concentration based on interstitial oxygen different from that of the base (1). The invention also relates to methods for producing such a substrate.

IPC 8 full level

H01L 21/761 (2006.01)

CPC (source: EP)

C30B 29/06 (2013.01); C30B 33/02 (2013.01); H01L 21/761 (2013.01); H01L 31/03529 (2013.01); H01L 31/068 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01); Y02P 70/50 (2015.11)

Citation (search report)

See references of WO 2014136083A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

WO 2014136083 A1 20140912; CN 105190864 A 20151223; EP 2965350 A1 20160113; FR 3003085 A1 20140912; FR 3003085 B1 20150327

DOCDB simple family (application)

IB 2014059498 W 20140306; CN 201480026164 A 20140306; EP 14713264 A 20140306; FR 1352097 A 20130308