EP 2976297 A1 20160127 - POLYCRYSTALLINE SILICON DEPOSITION METHOD
Title (en)
POLYCRYSTALLINE SILICON DEPOSITION METHOD
Title (de)
VERFAHREN ZUR ABSCHEIDUNG VON POLYKRISTALLINEM SILICIUM
Title (fr)
PROCÉDÉ SERVANT À DÉPOSER DU SILICIUM POLYCRISTALLIN
Publication
Application
Priority
- DE 102013204730 A 20130318
- EP 2014053734 W 20140226
Abstract (en)
[origin: CA2898159A1] The subject matter of the invention is a polycrystalline silicon deposition method carried out in a reactor delimited laterally and at the top by a reactor wall and at the bottom by a bottom plate, slim rods being arranged on the bottom plate and heated, a silicon-containing gaseous reaction mixture being introduced into the reactor chamber through gas inlets in the reactor wall and in the bottom plate, and silicon being deposited on the slim rods. The method according to the invention is characterised in that the silicon-containing gaseous reaction mixture is introduced through gas inlets in the reactor wall at an angle of 0-45° to the lateral reactor wall.
IPC 8 full level
C01B 33/035 (2006.01)
CPC (source: EP US)
C01B 33/035 (2013.01 - EP US); C23C 16/455 (2013.01 - US)
Citation (search report)
See references of WO 2014146876A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
DE 102013204730 A1 20140918; CA 2898159 A1 20140925; CA 2898159 C 20170919; CN 104981428 A 20151014; CN 104981428 B 20180209; EP 2976297 A1 20160127; JP 2016510305 A 20160407; JP 6147872 B2 20170614; KR 101792373 B1 20171031; KR 20150110809 A 20151002; MY 171867 A 20191105; SA 515361107 B1 20161127; TW 201437144 A 20141001; TW I527757 B 20160401; US 2016297684 A1 20161013; US 9738530 B2 20170822; WO 2014146876 A1 20140925
DOCDB simple family (application)
DE 102013204730 A 20130318; CA 2898159 A 20140226; CN 201480007974 A 20140226; EP 14706635 A 20140226; EP 2014053734 W 20140226; JP 2015556541 A 20140226; KR 20157023550 A 20140226; MY PI2015001777 A 20140226; SA 515361107 A 20150914; TW 103110070 A 20140318; US 201414777643 A 20140226