EP 2976782 A1 20160127 - METHOD FOR DOPING SILICON SHEETS
Title (en)
METHOD FOR DOPING SILICON SHEETS
Title (de)
VERFAHREN ZUR DOTIERUNG VON SILICIUMFOLIEN
Title (fr)
PROCEDE DE DOPAGE DE PLAQUES DE SILICIUM
Publication
Application
Priority
- FR 1300650 A 20130320
- EP 2014055621 W 20140320
Abstract (en)
[origin: WO2014147185A1] The invention relates to a method for doping a silicon sheet for producing a photovoltaic cell, said method comprising the steps consisting of: carrying out a first doping of at least one first part (11) of a surface (10) of the silicon sheet; forming an oxide layer (40) on the partially doped surface (10); and carrying out a second doping via the oxide layer (40), such that another part (12) of the surface (10) of the silicon sheet is doped.
IPC 8 full level
H01L 21/223 (2006.01); H01L 29/10 (2006.01); H01L 31/18 (2006.01)
CPC (source: EP US)
H01L 21/2236 (2013.01 - EP US); H01L 31/068 (2013.01 - EP US); H01L 31/1804 (2013.01 - EP US); H01L 31/186 (2013.01 - US); Y02E 10/547 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)
Citation (search report)
See references of WO 2014147185A1
Citation (examination)
JP S59155164 A 19840904 - TOSHIBA KK
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2014147185 A1 20140925; CN 105580110 A 20160511; EP 2976782 A1 20160127; FR 3003687 A1 20140926; FR 3003687 B1 20150717; JP 2016520996 A 20160714; KR 20150133739 A 20151130; US 2016204299 A1 20160714; US 2019164761 A1 20190530
DOCDB simple family (application)
EP 2014055621 W 20140320; CN 201480017013 A 20140320; EP 14711268 A 20140320; FR 1300650 A 20130320; JP 2016503664 A 20140320; KR 20157027263 A 20140320; US 201414777798 A 20140320; US 201916249130 A 20190116