Global Patent Index - EP 2980856 A4

EP 2980856 A4 20170621 - SEMICONDUCTOR DEVICE

Title (en)

SEMICONDUCTOR DEVICE

Title (de)

HALBLEITERBAUELEMENT

Title (fr)

DISPOSITIF SEMI-CONDUCTEUR

Publication

EP 2980856 A4 20170621 (EN)

Application

EP 14774672 A 20140318

Priority

  • JP 2013061508 A 20130325
  • JP 2014057397 W 20140318

Abstract (en)

[origin: US2015364613A1] Provided is a semiconductor device and a method for forming the same. The device has a substrate including one and another surfaces. A first semiconductor region of a first conductivity type is formed in the substrate. A second conductivity type, second semiconductor region is provided in a first surface layer, that includes the one surface, of the substrate. A first electrode is in contact with the second semiconductor region to form a junction therebetween. A first conductivity type, third semiconductor region is provided in a second surface layer, that includes the another surface, of the substrate. The third semiconductor region has a higher impurity concentration than the first semiconductor region. A fourth semiconductor region of the second conductivity type is provided in the first semiconductor region at a location deeper than the third semiconductor region from the another surface. A second electrode is in contact with the third semiconductor region.

IPC 8 full level

H01L 21/329 (2006.01); H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 29/868 (2006.01); H01L 21/22 (2006.01); H01L 21/225 (2006.01); H01L 21/263 (2006.01); H01L 21/265 (2006.01); H01L 21/268 (2006.01); H01L 21/324 (2006.01); H01L 29/32 (2006.01); H01L 29/36 (2006.01)

CPC (source: EP US)

H01L 21/221 (2013.01 - EP US); H01L 21/225 (2013.01 - US); H01L 21/2253 (2013.01 - EP US); H01L 21/263 (2013.01 - EP US); H01L 21/2636 (2013.01 - US); H01L 21/26506 (2013.01 - EP US); H01L 21/304 (2013.01 - US); H01L 29/0619 (2013.01 - EP US); H01L 29/0623 (2013.01 - EP US); H01L 29/32 (2013.01 - EP US); H01L 29/66143 (2013.01 - US); H01L 29/7395 (2013.01 - EP US); H01L 29/8611 (2013.01 - EP US); H01L 29/872 (2013.01 - US); H01L 21/268 (2013.01 - EP US); H01L 21/324 (2013.01 - EP US); H01L 29/0626 (2013.01 - EP US); H01L 29/36 (2013.01 - EP US)

Citation (search report)

  • [A] US 2007278472 A1 20071206 - MAUDER ANTON [DE], et al
  • [A] EP 1909332 A1 20080409 - ABB TECHNOLOGY AG [CH]
  • [A] US 2009289276 A1 20091126 - YOSHIURA YASUHIRO [JP], et al
  • [A] US 2009267200 A1 20091029 - GUTT THOMAS [DE], et al
  • [YA] US 2012267681 A1 20121025 - NEMOTO MICHIO [JP], et al
  • [A] KLAASSEN ET AL: "A unified mobility model for device simulation-II. Temperature dependence of carrier mobility and lifetime", SOLID STATE ELECTRONICS, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 35, no. 7, 1 July 1992 (1992-07-01), pages 961 - 967, XP025790660, ISSN: 0038-1101, [retrieved on 19920701], DOI: 10.1016/0038-1101(92)90326-8
  • [YA] MIN CHEN ET AL: "A Novel Diode Structure with Controlled Injection of Backside Holes (CIBH)", PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS; 4-8 JUNE 2006; NAPLES, ITALY. (IEEE CAT. NO. 06CH37817C), IEEE OPERATIONS CENTER, PISCATAWAY, NJ, USA, 4 June 2006 (2006-06-04), pages 1 - 4, XP031461936, ISBN: 978-0-7803-9714-9
  • [A] SIEMIENIEC R ET AL: "Possibilities and limits of axial lifetime control by radiation induced centers in fast recovery diodes", MICROELECTRONICS JOURNAL, MACKINTOSH PUBLICATIONS LTD. LUTON, GB, vol. 35, no. 3, 1 March 2004 (2004-03-01), pages 259 - 267, XP004487513, ISSN: 0026-2692, DOI: 10.1016/S0026-2692(03)00191-5
  • See references of WO 2014156849A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

US 2015364613 A1 20151217; US 9773923 B2 20170926; CN 104969360 A 20151007; CN 104969360 B 20180420; EP 2980856 A1 20160203; EP 2980856 A4 20170621; EP 2980856 B1 20200722; JP 6028852 B2 20161124; JP WO2014156849 A1 20170216; KR 102197376 B1 20210104; KR 20150136046 A 20151204; US 10374102 B2 20190806; US 2017352768 A1 20171207; US 2018175216 A1 20180621; US 9893211 B2 20180213; WO 2014156849 A1 20141002

DOCDB simple family (application)

US 201514821571 A 20150807; CN 201480007500 A 20140318; EP 14774672 A 20140318; JP 2014057397 W 20140318; JP 2015508373 A 20140318; KR 20157021183 A 20140318; US 201715686148 A 20170824; US 201815889098 A 20180205