EP 2988335 A4 20161123 - THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE, AND DISPLAY APPARATUS
Title (en)
THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE, AND DISPLAY APPARATUS
Title (de)
DÜNNSCHICHTTRANSISTOR UND HERSTELLUNGSVERFAHREN DAFÜR, ARRAYSUBSTRAT SOWIE ANZEIGEVORRICHTUNG
Title (fr)
TRANSISTOR EN COUCHES MINCES ET SON PROCÉDÉ DE FABRICATION, SUBSTRAT DE RÉSEAU, ET APPAREIL D'AFFICHAGE
Publication
Application
Priority
- CN 201310092496 A 20130321
- CN 2013078701 W 20130702
Abstract (en)
[origin: US2015179809A1] A thin film transistor and method for manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor comprises a substrate; a gate electrode, a source electrode, a drain electrode and a semiconductor layer formed on the substrate; a gate insulating layer between the gate electrode and the semiconductor layer or between the gate electrode and the source and drain electrodes; an etching stop layer between the semiconductor layer and the source and drain electrodes having a source contact hole and a drain contact hole therein; and a source buffer layer between the source electrode and the semiconductor layer and a drain buffer layer between the drain electrode and the semiconductor layer. The source and drain electrodes are metal Cu electrodes, and the source and drain buffer layers are Cu alloy layer. The formation of the source and drain buffer layer improves the adhesion of the source and drain electrodes thereon to the semiconductor layer therebeneath, and thus improves the performance of the TFT and image quality.
IPC 8 full level
H01L 29/786 (2006.01); H01L 21/441 (2006.01); H01L 27/12 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01)
CPC (source: EP KR US)
H01L 21/441 (2013.01 - EP US); H01L 27/1225 (2013.01 - EP US); H01L 27/1259 (2013.01 - EP US); H01L 29/45 (2013.01 - EP US); H01L 29/4908 (2013.01 - US); H01L 29/66969 (2013.01 - EP US); H01L 29/78606 (2013.01 - EP KR US); H01L 29/78618 (2013.01 - EP KR US); H01L 29/7869 (2013.01 - EP US); H01L 29/78693 (2013.01 - EP US)
Citation (search report)
- [I] US 2011175088 A1 20110721 - KIM JONG IN [KR], et al
- [I] US 2012146018 A1 20120614 - SCHNEIDER-BETZ SABINE [DE], et al
- See references of WO 2014146380A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
US 2015179809 A1 20150625; US 9240485 B2 20160119; CN 103219389 A 20130724; CN 103219389 B 20160316; EP 2988335 A1 20160224; EP 2988335 A4 20161123; EP 2988335 B1 20230830; JP 2016519847 A 20160707; KR 101814315 B1 20180102; KR 20140124355 A 20141024; KR 20160093083 A 20160805; WO 2014146380 A1 20140925
DOCDB simple family (application)
US 201314352182 A 20130702; CN 2013078701 W 20130702; CN 201310092496 A 20130321; EP 13844527 A 20130702; JP 2016503517 A 20130702; KR 20147011048 A 20130702; KR 20167020244 A 20130702