EP 3004818 A1 20160413 - FIELD-EFFECT-TRANSISTOR INFRARED SENSOR HAVING A MOVABLE GATE ELECTRODE
Title (en)
FIELD-EFFECT-TRANSISTOR INFRARED SENSOR HAVING A MOVABLE GATE ELECTRODE
Title (de)
FELDEFFEKTTRANSISTOR-INFRAROTSENSOR MIT BEWEGLICHER GATEELEKTRODE
Title (fr)
CAPTEUR INFRAROUGE À TRANSISTOR À EFFET DE CHAMPS MUNI D'ÉLECTRODE GRILLE
Publication
Application
Priority
- DE 102013210594 A 20130607
- EP 2014060930 W 20140527
Abstract (en)
[origin: WO2014195185A1] The invention relates to an infrared sensor (100) designed as a field-effect transistor, comprising a semiconductor substrate (117), which has a drain connection (110) and a source connection, wherein the drain connection (110) is separated from the source connection (115) by a channel region (105). The sensor (100) also comprises a gate unit (125), which can be moved in relation to the channel region (105) and which is arranged above the channel region, wherein the gate unit (125) is designed to change the shape of the gate unit and/or the distance (d) of at least one part (140) of the gate unit (125) from the channel region (105) in response to received electromagnetic radiation (135).
IPC 8 full level
G01J 1/42 (2006.01); G01J 5/20 (2006.01); H01L 27/14 (2006.01); H01L 31/101 (2006.01)
CPC (source: EP)
G01J 1/42 (2013.01); G01J 5/20 (2013.01); H01L 31/1136 (2013.01)
Citation (search report)
See references of WO 2014195185A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2014195185 A1 20141211; CN 105393096 A 20160309; CN 105393096 B 20170718; DE 102013210594 A1 20141211; EP 3004818 A1 20160413
DOCDB simple family (application)
EP 2014060930 W 20140527; CN 201480032219 A 20140527; DE 102013210594 A 20130607; EP 14728142 A 20140527