EP 3011597 A1 20160427 - SEMICONDUCTOR POWER SWITCH AND METHOD FOR PRODUCING A SEMICONDUCTOR POWER SWITCH
Title (en)
SEMICONDUCTOR POWER SWITCH AND METHOD FOR PRODUCING A SEMICONDUCTOR POWER SWITCH
Title (de)
HALBLEITER-LEISTUNGSSCHALTER UND VERFAHREN ZUR HERSTELLUNG EINES HALBLEITER-LEISTUNGSSCHALTERS
Title (fr)
INTERRUPTEUR DE PUISSANCE À SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION D'UN INTERRUPTEUR DE PUISSANCE À SEMI-CONDUCTEUR
Publication
Application
Priority
- DE 102013211360 A 20130618
- EP 2014061806 W 20140606
Abstract (en)
[origin: WO2014202410A1] The invention relates to a semiconductor power switch (100) comprising a carrier substrate (110) and a first semiconductor layer (130) consisting of a first semiconductor material which is applied to the carrier substrate (110). Furthermore, the semiconductor power switch (100) comprises a second semiconductor layer (135) consisting of a second semiconductor material which is applied to the first semiconductor layer (130), wherein the band gap of the first semiconductor material differs from the band gap of the second semiconductor material. The semiconductor power switch (100) also comprises a drain connection (145) and a source connection (150), which are embedded at least in the second semiconductor layer (135), wherein electrical contact can be made with at least one interface (140) between the first and second semiconductor materials by means of the drain connection (145) and the source connection (150). In addition, the semiconductor power switch (100) comprises a channel region (155) between the drain connection (145) and the source connection (150), wherein the channel region (155) is formed in order to act as electrical power switch. Finally, the semiconductor power switch (100) comprises a gate connection (170), which at least partially covers the channel region (155).
IPC 8 full level
H01L 29/778 (2006.01); H01L 21/3105 (2006.01); H01L 21/3115 (2006.01); H01L 29/30 (2006.01); H01L 29/40 (2006.01); H01L 29/51 (2006.01); H01L 29/792 (2006.01)
CPC (source: EP)
H01L 29/408 (2013.01); H01L 29/513 (2013.01); H01L 29/7781 (2013.01); H01L 29/7786 (2013.01); H01L 29/792 (2013.01); H01L 29/2003 (2013.01); H01L 29/51 (2013.01)
Citation (search report)
See references of WO 2014202410A1
Citation (examination)
- US 2007132037 A1 20070614 - HOSHI SHINICHI [JP], et al
- LIU H F ET AL: "Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) subst", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 113, no. 2, 14 January 2013 (2013-01-14), pages 23510 - 23510, XP012169467, ISSN: 0021-8979, [retrieved on 20130110], DOI: 10.1063/1.4774288
- XUAN RONG ET AL: "Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 101, no. 11, 10 September 2012 (2012-09-10), pages 112105 - 112105, XP012164498, ISSN: 0003-6951, [retrieved on 20120912], DOI: 10.1063/1.4752113
- CHUNHUA ZHOU ET AL: "Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si structures", POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2012 24TH INTERNATIONAL SYMPOSIUM ON, IEEE, 3 June 2012 (2012-06-03), pages 245 - 248, XP032452812, ISBN: 978-1-4577-1594-5, DOI: 10.1109/ISPSD.2012.6229069
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
DE 102013211360 A1 20141218; CN 105283960 A 20160127; EP 3011597 A1 20160427; JP 2016524332 A 20160812; WO 2014202410 A1 20141224
DOCDB simple family (application)
DE 102013211360 A 20130618; CN 201480034527 A 20140606; EP 14728956 A 20140606; EP 2014061806 W 20140606; JP 2016520371 A 20140606