EP 3028311 A1 20160608 - PROCESS FOR PRODUCING A P-N JUNCTION IN A CZTS-BASED PHOTOVOLTAIC CELL AND CZTS-BASED SUPERSTRATE PHOTOVOLTAIC CELL
Title (en)
PROCESS FOR PRODUCING A P-N JUNCTION IN A CZTS-BASED PHOTOVOLTAIC CELL AND CZTS-BASED SUPERSTRATE PHOTOVOLTAIC CELL
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES P-N-ÜBERGANG IN EINER CZTS-BASIERTEN FOTOVOLTAISCHEN ZELLE UND CZTS-BASIERTE SUPERSTRAT-PV-ZELLE
Title (fr)
PROCÉDÉ DE RÉALISATION D'UNE JONCTION PN DANS UNE CELLULE PHOTOVOLTAÏQUE À BASE DE CZTS ET CELLULE PHOTOVOLTAÏQUE EN CONFIGURATION SUPERSTRAT ET À BASE DE CZTS
Publication
Application
Priority
- FR 1357660 A 20130801
- IB 2014063305 W 20140722
Abstract (en)
[origin: WO2015015367A1] The invention relates to a process for producing a p-n junction in a photovoltaic cell made of thin CZTS-based films, comprising: a) a step of depositing a film of precursors containing zinc, tin and copper, the amount of zinc being larger than that required to convert the precursors into a CZTS type photovoltaic material and b) a step of annealing the precursors, under a sulphur- and/or selenium-containing atmosphere, so as to obtain a photovoltaic film made of CZTS and a buffer layer made of ZnS1-xSex, where x is comprised between 0 and 1.
IPC 8 full level
H01L 31/032 (2006.01); H01L 21/02 (2006.01); H01L 31/072 (2012.01)
CPC (source: EP US)
H01L 21/02422 (2013.01 - EP US); H01L 21/02474 (2013.01 - EP US); H01L 21/02477 (2013.01 - EP US); H01L 21/02491 (2013.01 - EP US); H01L 21/02502 (2013.01 - EP US); H01L 21/02557 (2013.01 - EP US); H01L 21/0256 (2013.01 - EP US); H01L 21/02568 (2013.01 - EP US); H01L 21/02614 (2013.01 - EP US); H01L 31/022466 (2013.01 - US); H01L 31/0326 (2013.01 - EP US); H01L 31/0336 (2013.01 - US); H01L 31/0445 (2014.12 - US); H01L 31/072 (2013.01 - EP US); H01L 31/18 (2013.01 - US); Y02E 10/50 (2013.01 - US); Y02E 10/547 (2013.01 - EP)
Citation (search report)
See references of WO 2015015367A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2015015367 A1 20150205; EP 3028311 A1 20160608; FR 3009434 A1 20150206; FR 3009434 B1 20161223; US 2016163896 A1 20160609
DOCDB simple family (application)
IB 2014063305 W 20140722; EP 14767116 A 20140722; FR 1357660 A 20130801; US 201414908932 A 20140722