EP 3042391 A1 20160713 - METHOD FOR PRODUCING A SUBSTRATE, SUBSTRATE, METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH A SUBSTRATE, MICRO-ELECTROMECHANICAL SYSTEM WITH A SUBSTRATE, AND MOTOR VEHICLE
Title (en)
METHOD FOR PRODUCING A SUBSTRATE, SUBSTRATE, METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH A SUBSTRATE, MICRO-ELECTROMECHANICAL SYSTEM WITH A SUBSTRATE, AND MOTOR VEHICLE
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES SUBSTRATS, SUBSTRAT, METALL-OXID-HALBLEITER-FELDEFFEKTTRANSISTOR MIT EINEM SUBSTRAT, MIKROELEKTROMECHANISCHES SYSTEM MIT EINEM SUBSTRAT, UND KRAFTFAHRZEUG
Title (fr)
PROCÉDÉ PERMETTANT DE PRODUIRE UN SUBSTRAT, SUBSTRAT, TRANSISTOR À EFFET DE CHAMP MÉTAL-OXYDE-SEMI-CONDUCTEUR POURVU D'UN SUBSTRAT, SYSTÈME MICROÉLECTROMÉCANIQUE POURVU D'UN SUBSTRAT, ET VÉHICULE AUTOMOBILE
Publication
Application
Priority
- DE 102013217768 A 20130905
- EP 2014066951 W 20140807
Abstract (en)
[origin: WO2015032577A1] The present invention relates to a method for producing a substrate, a metal-oxide-semiconductor field-effect transistor with a substrate, a micro-electromechanical system with a substrate and a motor vehicle. The substrate concerned comprises a silicon carbide layer (10). The method for producing a substrate for a metal-oxide-semiconductor field-effect transistor or a micro-electromechanical system comprises the following steps: (a) dry etching of a preliminary trench into the substrate by using a structured first masking layer, wherein the dry etching is carried out in such a way that a remnant (60') of the first structured masking layer remains, (b) applying a second masking layer (65) at least to walls of the preliminary trench, and (c) dry etching by using the remnant (60') of the first masking layer and the second masking layer so as to produce a trench with a step in the trench.
IPC 8 full level
H01L 21/308 (2006.01); B81B 1/00 (2006.01); B81C 1/00 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP US)
H01L 21/3083 (2013.01 - EP US); H01L 29/045 (2013.01 - US); H01L 29/1095 (2013.01 - US); H01L 29/1608 (2013.01 - EP US); H01L 29/4236 (2013.01 - EP US); H01L 29/66068 (2013.01 - EP US); H01L 29/7813 (2013.01 - EP US)
Citation (search report)
See references of WO 2015032577A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
DE 102013217768 A1 20150305; EP 3042391 A1 20160713; JP 2016538729 A 20161208; US 10636901 B2 20200428; US 2016218208 A1 20160728; WO 2015032577 A1 20150312
DOCDB simple family (application)
DE 102013217768 A 20130905; EP 14747945 A 20140807; EP 2014066951 W 20140807; JP 2016539451 A 20140807; US 201414917009 A 20140807