EP 3044813 A1 20160720 - METHOD FOR PRODUCING A SOLAR CELL INVOLVING DOPING BY ION IMPLANTATION AND THE DEPOSITING OF AN OUTDIFFUSION BARRIER
Title (en)
METHOD FOR PRODUCING A SOLAR CELL INVOLVING DOPING BY ION IMPLANTATION AND THE DEPOSITING OF AN OUTDIFFUSION BARRIER
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER SOLARZELLE UMFASSEND EINE DOTIERUNG DURCH IONENIMPLANTATION UND ABSCHEIDEN EINER AUSDIFFUSIONSBARRIERE
Title (fr)
PROCÉDÉ DE PRODUCTION D'UNE CELLULE SOLAIRE IMPLIQUANT UN DOPAGE PAR IMPLANTATION IONIQUE ET LA SÉPARATION D'UNE BARRIÈRE DE DIFFUSION VERS L'EXTÉRIEUR
Publication
Application
Priority
- DE 102013218351 A 20130913
- EP 2014066856 W 20140805
Abstract (en)
[origin: WO2015036181A1] The invention relates to a method for producing a solar cell (1) from crystalline semiconductor material, wherein a first doping region (5) is formed by means of ion implantation (S2) of a first dopant in a first surface (3a) of a semiconductor substrate (3), and a second doping region (7) is formed by means of ion implantation (S3) or thermal indiffusion of a second dopant in the second surface (3b) of the semiconductor substrate. After the doping of the second surface, a cap (9b) acting as an outdiffusion barrier for the second dopant is applied and an annealing step (S4) is subsequently carried out.
IPC 8 full level
H01L 31/0216 (2006.01); H01L 21/265 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01)
CPC (source: EP KR US)
H01L 21/26513 (2013.01 - EP KR US); H01L 31/02167 (2013.01 - EP KR US); H01L 31/0288 (2013.01 - KR); H01L 31/0392 (2013.01 - KR); H01L 31/068 (2013.01 - EP KR US); H01L 31/18 (2013.01 - KR); H01L 31/1804 (2013.01 - EP KR US); H01L 31/1864 (2013.01 - EP KR US); Y02E 10/547 (2013.01 - EP KR US); Y02P 70/50 (2015.11 - EP KR US)
Citation (search report)
See references of WO 2015036181A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2015036181 A1 20150319; CN 106104755 A 20161109; DE 102013218351 A1 20150319; EP 3044813 A1 20160720; JP 2016535457 A 20161110; KR 20160071373 A 20160621; MY 173528 A 20200131; US 10263135 B2 20190416; US 2016233372 A1 20160811
DOCDB simple family (application)
EP 2014066856 W 20140805; CN 201480058077 A 20140805; DE 102013218351 A 20130913; EP 14753037 A 20140805; JP 2016541855 A 20140805; KR 20167008592 A 20140805; MY PI2016700869 A 20140805; US 201415021077 A 20140805