Global Patent Index - EP 3063092 A1

EP 3063092 A1 20160907 - PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON

Title (en)

PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON

Title (de)

VERFAHREN ZUR HERSTELLUNG VON POLYKRISTALLINEM SILICIUM

Title (fr)

PROCÉDÉ DE PRODUCTION DE SILICIUM POLYCRISTALLIN

Publication

EP 3063092 A1 20160907 (DE)

Application

EP 14786183 A 20141017

Priority

  • DE 102013221826 A 20131028
  • EP 2014072328 W 20141017

Abstract (en)

[origin: WO2015062880A1] The invention relates to a method for producing polycrystalline silicon, comprising a deposition of polycrystalline silicon on a carrier body in order to obtain a polycrystalline silicon rod, or a deposition of polycrystalline silicon on silicon particles in order to obtain polycrystalline silicon granules, wherein each deposition takes place in a reactor located in a class 1-100 000 cleanroom into which filtered air is directed. For filtration, said air first passes through at least one filter that removes particles greater than or equal to 1 μm, and subsequently passes through a HEPA filter that removes particles smaller than 1 μm.

IPC 8 full level

C01B 33/027 (2006.01); C01B 33/035 (2006.01); F24F 3/16 (2006.01)

CPC (source: EP KR US)

B01D 46/00 (2013.01 - KR); B01D 71/36 (2013.01 - KR); C01B 33/027 (2013.01 - EP US); C01B 33/03 (2013.01 - EP KR US); C01B 33/035 (2013.01 - EP KR US); C23C 16/22 (2013.01 - KR); C23C 16/442 (2013.01 - KR US); F24F 3/167 (2021.01 - KR); F24F 3/167 (2021.01 - EP US)

Citation (search report)

See references of WO 2015062880A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

DE 102013221826 A1 20150430; CN 105829246 A 20160803; CN 105829246 B 20180413; EP 3063092 A1 20160907; JP 2016536249 A 20161124; JP 6301465 B2 20180328; KR 101844911 B1 20180518; KR 20160049048 A 20160504; MY 176742 A 20200820; TW 201520384 A 20150601; TW I531693 B 20160501; US 2016273099 A1 20160922; US 9771651 B2 20170926; WO 2015062880 A1 20150507

DOCDB simple family (application)

DE 102013221826 A 20131028; CN 201480059376 A 20141017; EP 14786183 A 20141017; EP 2014072328 W 20141017; JP 2016526916 A 20141017; KR 20167010514 A 20141017; MY PI2016000581 A 20141017; TW 103136564 A 20141023; US 201415032227 A 20141017