EP 3063781 A1 20160907 - SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT IN A SUBSTRATE HAVING A CRYSTALLOGRAPHIC (100) ORIENTATION
Title (en)
SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT IN A SUBSTRATE HAVING A CRYSTALLOGRAPHIC (100) ORIENTATION
Title (de)
HALBLEITERBAUELEMENT SOWIE EIN VERFAHREN ZUR ERZEUGUNG EINES HALBLEITERBAUELEMENTES IN EINEM EINE KRISTALLOGRAPHISCHE (100)-ORIENTIERUNG AUFWEISENDEN SUBSTRAT
Title (fr)
COMPOSANT À SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION D'UN COMPOSANT À SEMI-CONDUCTEUR DANS UN SUBSTRAT AYANT UNE ORIENTATION CRISTALLOGRAPHIQUE
Publication
Application
Priority
- DE 102013222160 A 20131031
- EP 2014071333 W 20141006
Abstract (en)
[origin: WO2015062817A1] The invention relates to a semiconductor component (100), comprising a substrate (90) and a gallium nitride-containing first functional element (80) which is implemented in the surface (91) of the substrate (90). The substrate (90) has a crystallographic (100) orientation. The invention further relates to a method for producing a semiconductor element (100) in a substrate (90) having a crystallographic (100) orientation.
IPC 8 full level
H01L 21/02 (2006.01)
CPC (source: EP US)
H01L 21/02381 (2013.01 - EP US); H01L 21/0243 (2013.01 - EP US); H01L 21/02433 (2013.01 - EP US); H01L 21/0254 (2013.01 - EP US); H01L 29/045 (2013.01 - EP US); H01L 29/0692 (2013.01 - US); H01L 29/205 (2013.01 - EP US); H01L 29/778 (2013.01 - US); H01L 29/861 (2013.01 - EP US)
Citation (search report)
See references of WO 2015062817A1
Citation (examination)
- US 2011049681 A1 20110303 - VIELEMEYER MARTIN HENNING ALBRECHT [AT]
- US 2007205407 A1 20070906 - MATSUO HISAYOSHI [JP], et al
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
DE 102013222160 A1 20150430; CN 105849860 A 20160810; EP 3063781 A1 20160907; US 2016276471 A1 20160922; WO 2015062817 A1 20150507
DOCDB simple family (application)
DE 102013222160 A 20131031; CN 201480071600 A 20141006; EP 14780877 A 20141006; EP 2014071333 W 20141006; US 201415033497 A 20141006