EP 3070739 A2 20160921 - SEMICONDUCTOR DEVICE AND WAFER LEVEL PACKAGE INCLUDING SUCH SEMICONDUCTOR DEVICE
Title (en)
SEMICONDUCTOR DEVICE AND WAFER LEVEL PACKAGE INCLUDING SUCH SEMICONDUCTOR DEVICE
Title (de)
HALBLEITERBAUELEMENT UND DESSEN VERKAPSELUNG AUF WAFEREBENE
Title (fr)
DISPOSITIF SEMI-CONDUCTEUR ET BOÎTIER D'ENCAPSULATION SUR TRANCHE COMPRENANT UN TEL DISPOSITIF
Publication
Application
Priority
- US 201562135935 P 20150320
- US 201615006082 A 20160125
Abstract (en)
An RDL structure on a passivation layer includes a first landing pad disposed directly above a first on-chip metal pad; a first via in a passivation layer to electrically connecting the first landing pad with the first on-chip metal pad; a second landing pad disposed directly above the second on-chip metal pad; a second via in the passivation layer to electrically connecting the second landing pad with the second on-chip metal pad; and at least five traces being disposed on the passivation layer and passing through a space between the first landing pad and the second landing pad.
IPC 8 full level
H01L 23/522 (2006.01); H01L 23/485 (2006.01); H01L 23/538 (2006.01); H01L 23/31 (2006.01); H01L 23/66 (2006.01)
CPC (source: CN EP US)
H01L 23/3114 (2013.01 - CN); H01L 23/3171 (2013.01 - EP US); H01L 23/3192 (2013.01 - EP US); H01L 23/49811 (2013.01 - US); H01L 23/49838 (2013.01 - US); H01L 23/5225 (2013.01 - CN); H01L 23/5226 (2013.01 - US); H01L 23/53228 (2013.01 - US); H01L 23/5384 (2013.01 - US); H01L 23/5386 (2013.01 - US); H01L 23/66 (2013.01 - EP US); H01L 24/05 (2013.01 - EP US); H01L 24/09 (2013.01 - US); H01L 24/17 (2013.01 - US); H01L 24/20 (2013.01 - EP US); H01L 24/25 (2013.01 - EP US); H01L 25/0655 (2013.01 - US); H01L 23/291 (2013.01 - EP US); H01L 23/525 (2013.01 - EP US); H01L 24/24 (2013.01 - EP US); H01L 24/96 (2013.01 - EP US); H01L 2224/02331 (2013.01 - US); H01L 2224/0401 (2013.01 - EP US); H01L 2224/04105 (2013.01 - EP US); H01L 2224/05008 (2013.01 - EP US); H01L 2224/05013 (2013.01 - EP US); H01L 2224/05015 (2013.01 - EP US); H01L 2224/05022 (2013.01 - EP US); H01L 2224/05124 (2013.01 - US); H01L 2224/05147 (2013.01 - EP US); H01L 2224/05553 (2013.01 - EP US); H01L 2224/05555 (2013.01 - EP US); H01L 2224/05569 (2013.01 - EP US); H01L 2224/05572 (2013.01 - EP US); H01L 2224/05647 (2013.01 - EP US); H01L 2224/12105 (2013.01 - EP US); H01L 2224/13147 (2013.01 - US); H01L 2224/19 (2013.01 - EP US); H01L 2224/24137 (2013.01 - EP US); H01L 2224/244 (2013.01 - EP US); H01L 2224/245 (2013.01 - EP US); H01L 2224/25175 (2013.01 - EP US); H01L 2224/73209 (2013.01 - EP US); H01L 2924/01029 (2013.01 - US); H01L 2924/14 (2013.01 - EP US); H01L 2924/18162 (2013.01 - EP US); H01L 2924/3025 (2013.01 - EP US)
C-Set (source: EP US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 3070739 A2 20160921; EP 3070739 A3 20161207; CN 105990312 A 20161005; CN 105990312 B 20190517; TW 201635463 A 20161001; TW I559479 B 20161121; US 10224287 B2 20190305; US 2016276277 A1 20160922; US 2017271265 A1 20170921; US 9704808 B2 20170711
DOCDB simple family (application)
EP 16153575 A 20160201; CN 201610099033 A 20160223; TW 105107617 A 20160311; US 201615006082 A 20160125; US 201715613144 A 20170603