EP 3075003 A1 20161005 - ETCHING PROCESS
Title (en)
ETCHING PROCESS
Title (de)
ÄTZVERFAHREN
Title (fr)
PROCESSUS DE GRAVURE
Publication
Application
Priority
- EP 13194774 A 20131128
- EP 2014075023 W 20141119
- EP 14825103 A 20141119
Abstract (en)
[origin: EP2879165A1] Processes for the manufacture of devices including microelectromechanical systems comprising a step in which a substrate is etched using an etching agent prepared from SF 4 are disclosed.
IPC 8 full level
H01L 21/3065 (2006.01); C23C 16/44 (2006.01); C23F 1/00 (2006.01)
CPC (source: EP)
C23F 4/00 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/32136 (2013.01)
Citation (search report)
See references of WO 2015078749A1
Citation (examination)
PATEAU AMAND ET AL: "Modeling of inductively coupled plasma SF6/O2/Ar plasma discharge: Effect of O2on the plasma kinetic properties", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART A, AVS /AIP, MELVILLE, NY., US, vol. 32, no. 2, 1 January 1901 (1901-01-01), XP012184288, ISSN: 0734-2101, [retrieved on 19010101], DOI: 10.1116/1.4853675
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 2879165 A1 20150603; EP 3075003 A1 20161005; WO 2015078749 A1 20150604
DOCDB simple family (application)
EP 13194774 A 20131128; EP 14825103 A 20141119; EP 2014075023 W 20141119