Global Patent Index - EP 3077332 A1

EP 3077332 A1 20161012 - METAL CHALCOGENIDE THIN LAYER ELECTRODE, METHOD FOR PRODUCTION THEREOF AND USE THEREOF

Title (en)

METAL CHALCOGENIDE THIN LAYER ELECTRODE, METHOD FOR PRODUCTION THEREOF AND USE THEREOF

Title (de)

METALLCHALKOGENID-DÜNNSCHICHTELEKTRODE, VERFAHREN ZU IHRER HERSTELLUNG UND VERWENDUNG

Title (fr)

ÉLECTRODE À COUCHE FINE À CHALCOGÉNURE DE MÉTAL, PROCÉDÉ POUR LA PRODUCTION DE L'ÉLECTRODE ET UTILISATION ASSOCIÉE

Publication

EP 3077332 A1 20161012 (DE)

Application

EP 14820763 A 20141204

Priority

  • DE 102013224900 A 20131204
  • EP 2014076591 W 20141204

Abstract (en)

[origin: WO2015082626A1] The invention relates to a method for producing a metal chalcogenide thin layer electrode, comprising the steps: (a) bringing a metal or metal oxide into contact with an elementary halogen in a non-aqueous solvent, generating a metal halogenide bond in the solution, (b) connecting a negative electrical voltage to an electrically conductive or semiconductive substrate which is in contact to the solution from step (a), and (c) during and/or after step (b), bringing the substrate into contact with an elementary chalcogen, forming a metal chalcogenide layer on the substrate. The invention furthermore relates to a metal chalcogenide thin layer electrode which can be produced by the method and use thereof as an anode for oxygen release in (photo)electrochemical water-splitting.

IPC 8 full level

C01B 9/06 (2006.01); C01G 3/04 (2006.01); C01G 49/10 (2006.01); C01G 51/08 (2006.01); C01G 53/08 (2006.01); C25B 1/00 (2006.01); C25B 11/04 (2006.01); C25D 9/08 (2006.01)

CPC (source: EP US)

C01B 33/20 (2013.01 - EP US); C01G 3/02 (2013.01 - EP US); C01G 3/04 (2013.01 - EP US); C01G 49/02 (2013.01 - EP US); C01G 49/10 (2013.01 - EP US); C01G 51/04 (2013.01 - EP US); C01G 51/08 (2013.01 - EP US); C01G 51/40 (2013.01 - US); C01G 53/00 (2013.01 - EP US); C01G 53/006 (2013.01 - EP US); C01G 53/04 (2013.01 - EP US); C01G 53/08 (2013.01 - EP US); C25B 1/55 (2021.01 - EP US); C25B 11/077 (2021.01 - EP US); C25D 3/66 (2013.01 - US); C25D 5/003 (2013.01 - US); C25D 5/34 (2013.01 - US); C25D 5/50 (2013.01 - US); C25D 7/12 (2013.01 - EP US); C25D 9/08 (2013.01 - EP US); C01P 2002/85 (2013.01 - EP US); C01P 2004/03 (2013.01 - EP US); C01P 2006/40 (2013.01 - US); Y02E 60/36 (2013.01 - EP)

Citation (search report)

See references of WO 2015082626A1

Citation (examination)

  • US 2009260991 A1 20091022 - ITO NAOKI [JP], et al
  • US 2005089681 A1 20050428 - MARSAN BENOIT [CA], et al
  • YUXIN YIN ET AL: "Enhanced solar water-splitting efficiency using core/sheath heterostructure CdS/TiO2 nanotube arrays", NANOTECHNOLOGY, IOP, BRISTOL, GB, vol. 18, no. 49, 12 December 2007 (2007-12-12), pages 495608, XP020129592, ISSN: 0957-4484
  • KAMADA K ET AL: "Electrodeposition of titanium(IV) oxide film from sacrificial titanium anode in I"2-added acetone bath", ELECTROCHIMICA A, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 47, no. 20, 5 August 2002 (2002-08-05), pages 3309 - 3313, XP004373166, ISSN: 0013-4686, DOI: 10.1016/S0013-4686(02)00251-7
  • RAJESHWAR K ET AL: "Spatially directed electrosynthesis of semiconductors for photoelectrochemical applications", CURRENT OPINION IN SOLID STATE AND MATERIALS SCIENCE, ELSEVIER SCIENCE LTD, OXFORD, GB, vol. 8, no. 3-4, 1 June 2004 (2004-06-01), pages 173 - 182, XP004742041, ISSN: 1359-0286, DOI: 10.1016/J.COSSMS.2004.07.001
  • GAL D ET AL: "Electrochemical deposition of zinc oxide films from non-aqueous solution: a new buffer/window process for thin film solar cells", THIN SOLID FILMS, ELSEVIER, AMSTERDAM, NL, vol. 361-362, no. 1, 1 February 2000 (2000-02-01), pages 79 - 83, XP004187446, ISSN: 0040-6090, DOI: 10.1016/S0040-6090(99)00772-5

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

WO 2015082626 A1 20150611; DE 102013224900 A1 20150611; EP 3077332 A1 20161012; JP 2017503084 A 20170126; US 10526716 B2 20200107; US 2016305035 A1 20161020

DOCDB simple family (application)

EP 2014076591 W 20141204; DE 102013224900 A 20131204; EP 14820763 A 20141204; JP 2016557189 A 20141204; US 201415101639 A 20141204