EP 3080844 B1 20220803 - FORMING SILICIDE AND CONTACT AT EMBEDDED EPITAXIAL FACET
Title (en)
FORMING SILICIDE AND CONTACT AT EMBEDDED EPITAXIAL FACET
Title (de)
BILDUNG VON SILICID UND KONTAKTEN AUF EINER EINGEBETTETEN EPITAKTISCHEN FACETTE
Title (fr)
FORMATION DE SILICIURE ET DE CONTACT AU NIVEAU D'UNE FACETTE ÉPITAXIALE INTÉGRÉE
Publication
Application
Priority
- US 201361914995 P 20131212
- US 201414563062 A 20141208
- US 2014070111 W 20141212
Abstract (en)
[origin: US2015170972A1] An integrated circuit with an MOS transistor abutting field oxide and a gate structure on the field oxide adjacent to the MOS transistor and a gap between an epitaxial source/drain and the field oxide is formed with a silicon dioxide-based gap filler in the gap. Metal silicide is formed on the exposed epitaxial source/drain region. A CESL is formed over the integrated circuit and a PMD layer is formed over the CESL. A contact is formed through the PMD layer and CESL to make an electrical connection to the metal silicide on the epitaxial source/drain region.
IPC 8 full level
H01L 27/088 (2006.01); H01L 21/336 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 29/08 (2006.01)
CPC (source: EP US)
H01L 21/823481 (2013.01 - US); H01L 21/823807 (2013.01 - EP US); H01L 21/823814 (2013.01 - EP US); H01L 21/823878 (2013.01 - EP US); H01L 23/535 (2013.01 - US); H01L 27/092 (2013.01 - US); H01L 29/0847 (2013.01 - EP US); H01L 29/4175 (2013.01 - US); H01L 29/665 (2013.01 - EP US); H01L 29/66636 (2013.01 - EP US); H01L 21/76897 (2013.01 - EP US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
US 2015170972 A1 20150618; US 9508601 B2 20161129; CN 105814688 A 20160727; CN 105814688 B 20190517; EP 3080844 A1 20161019; EP 3080844 A4 20170712; EP 3080844 B1 20220803; JP 2017504192 A 20170202; JP 2019091951 A 20190613; JP 6503359 B2 20190417; JP 6685442 B2 20200422; US 10008499 B2 20180626; US 2017047329 A1 20170216; US 2018047728 A1 20180215; US 9812452 B2 20171107; WO 2015089450 A1 20150618
DOCDB simple family (application)
US 201414563062 A 20141208; CN 201480067520 A 20141212; EP 14869386 A 20141212; JP 2016539219 A 20141212; JP 2019056248 A 20190325; US 2014070111 W 20141212; US 201615336248 A 20161027; US 201715723373 A 20171003