EP 3087614 B1 20210217 - P-TYPE OXIDE SEMICONDUCTOR, COMPOSITION FOR PRODUCING P-TYPE OXIDE SEMICONDUCTOR, METHOD FOR PRODUCING P-TYPE OXIDE SEMICONDUCTOR, SEMICONDUCTOR ELEMENT, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM
Title (en)
P-TYPE OXIDE SEMICONDUCTOR, COMPOSITION FOR PRODUCING P-TYPE OXIDE SEMICONDUCTOR, METHOD FOR PRODUCING P-TYPE OXIDE SEMICONDUCTOR, SEMICONDUCTOR ELEMENT, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM
Title (de)
P-TYP-OXIDHALBLEITER, ZUSAMMENSETZUNG ZUR HERSTELLUNG DES P-TYP-OXIDHALBLEITERS, VERFAHREN ZUR HERSTELLUNG DES P-TYP-OXIDHALBLEITERS, HALBLEITERELEMENT, ANZEIGEELEMENT, BILDANZEIGEVORRICHTUNG UND SYSTEM
Title (fr)
SEMICONDUCTEUR D'OXYDE DE TYPE P, COMPOSITION POUR LA PRODUCTION D'UN SEMICONDUCTEUR D'OXYDE DE TYPE P, PROCÉDÉ DE PRODUCTION D'UN SEMICONDUCTEUR D'OXYDE DE TYPE P, ÉLÉMENT À SEMICONDUCTEURS, ÉLÉMENT D'AFFICHAGE, DISPOSITIF D'AFFICHAGE D'IMAGE ET SYSTÈME CORRESPONDANT
Publication
Application
Priority
- JP 2013268915 A 20131226
- JP 2014212632 A 20141017
- JP 2014083814 W 20141216
Abstract (en)
[origin: WO2015098785A1] A p-type oxide semiconductor, which contains: a metal oxide containing thallium (Tl), where the metal oxide has been hole doped.
IPC 8 full level
H01L 29/786 (2006.01); G02F 1/1368 (2006.01); G09F 9/30 (2006.01); H01L 27/32 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01)
CPC (source: EP KR RU US)
G02F 1/1368 (2013.01 - KR RU); G09G 3/3225 (2013.01 - US); H01L 21/18 (2013.01 - RU); H01L 29/66969 (2013.01 - EP KR US); H01L 29/786 (2013.01 - RU); H01L 29/78693 (2013.01 - EP KR US); H01L 29/861 (2013.01 - EP KR US); H10K 50/11 (2023.02 - US); H10K 59/12 (2023.02 - US); H10K 59/1213 (2023.02 - EP KR US); G02F 1/1368 (2013.01 - EP US); G09G 3/344 (2013.01 - US); G09G 3/348 (2013.01 - US); G09G 3/3648 (2013.01 - US); G09G 3/38 (2013.01 - US); H10K 59/12 (2023.02 - EP KR RU)
Citation (examination)
WO 2013035843 A1 20130314 - TAMURA SEISAKUSHO KK [JP], et al
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2015098785 A1 20150702; BR 112016015034 A2 20170808; BR 112016015034 B1 20211214; CN 105849914 A 20160810; CN 105849914 B 20191101; EP 3087614 A1 20161102; EP 3087614 A4 20170208; EP 3087614 B1 20210217; JP 2015144240 A 20150806; JP 6547273 B2 20190724; KR 101824349 B1 20180131; KR 20160102265 A 20160829; RU 2016130090 A 20180131; RU 2660407 C2 20180706; SG 11201605254R A 20160728; TW 201526233 A 20150701; TW I672814 B 20190921; US 2017301738 A1 20171019
DOCDB simple family (application)
JP 2014083814 W 20141216; BR 112016015034 A 20141216; CN 201480071319 A 20141216; EP 14875695 A 20141216; JP 2014212632 A 20141017; KR 20167019926 A 20141216; RU 2016130090 A 20141216; SG 11201605254R A 20141216; TW 103145072 A 20141223; US 201415107160 A 20141216