Global Patent Index - EP 3089198 A1

EP 3089198 A1 20161102 - METHOD FOR PROCESSING TARGET OBJECT

Title (en)

METHOD FOR PROCESSING TARGET OBJECT

Title (de)

VERFAHREN ZUR VERARBEITUNG EINES ZIELOBJEKTS

Title (fr)

PROCÉDÉ DE TRAITEMENT D'UN OBJET CIBLE

Publication

EP 3089198 A1 20161102 (EN)

Application

EP 16167046 A 20160426

Priority

JP 2015090158 A 20150427

Abstract (en)

A method for processing a target object by using a capacitively coupled plasma processing apparatus includes a first step of supplying a first gas containing a silicon-containing gas into the processing chamber where a target object is accommodated; a second step of generating a plasma of a rare gas in the processing chamber after executing the first step; a third step of generating a plasma of a second gas containing oxygen gas in the processing chamber after executing the second step; and a fourth step of generating a plasma of a rare gas in the processing chamber after executing the third step. A silicon oxide film is formed by repeatedly executing a sequence including the first step to the fourth step. A negative DC voltage is applied to the upper electrode in at least any one of the second step to the fourth step.

IPC 8 full level

H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/316 (2006.01)

CPC (source: CN EP KR US)

C23C 16/402 (2013.01 - EP US); C23C 16/4404 (2013.01 - CN); C23C 16/45534 (2013.01 - EP US); C23C 16/45542 (2013.01 - EP US); H01J 37/32091 (2013.01 - CN); H01J 37/321 (2013.01 - KR); H01J 37/32862 (2013.01 - CN KR); H01L 21/02046 (2013.01 - KR); H01L 21/02164 (2013.01 - EP KR US); H01L 21/02274 (2013.01 - EP US); H01L 21/0228 (2013.01 - EP US); H01L 21/02315 (2013.01 - KR); H01L 21/0234 (2013.01 - KR); H01L 21/0332 (2013.01 - US); H01L 21/0337 (2013.01 - EP US); H01L 21/3065 (2013.01 - KR US); H01L 21/31116 (2013.01 - EP US); H01L 21/31138 (2013.01 - EP KR US); H01L 21/31144 (2013.01 - EP US); H01L 21/67069 (2013.01 - US); H01J 2237/334 (2013.01 - EP US)

Citation (applicant)

Citation (search report)

  • [Y] US 2013023120 A1 20130124 - YAEGASHI HIDETAMI [JP], et al
  • [Y] US 2012009802 A1 20120112 - LAVOIE ADRIEN [US], et al
  • [A] US 2008081104 A1 20080403 - HASEBE KAZUHIDE [JP], et al
  • [Y] PIETER C ROWLETTE ET AL: "Digital Control of SiO2 Film Deposition at Room Temperature", JOURNAL OF PHYSICAL CHEMISTRY C, AMERICAN CHEMICAL SOCIETY, US, vol. 113, no. 17, 30 April 2009 (2009-04-30), pages 6906 - 6909, XP002754905, ISSN: 1932-7447, [retrieved on 20090408], DOI: 10.1021/JP902122G

Citation (examination)

EP 3007205 A1 20160413 - TOKYO ELECTRON LTD [JP]

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

EP 3089198 A1 20161102; CN 106098523 A 20161109; CN 106098523 B 20180907; JP 2016207915 A 20161208; JP 6462477 B2 20190130; KR 102385488 B1 20220411; KR 20160127674 A 20161104; TW 201705310 A 20170201; TW I689995 B 20200401; US 2016314982 A1 20161027; US 9859126 B2 20180102

DOCDB simple family (application)

EP 16167046 A 20160426; CN 201610268935 A 20160427; JP 2015090158 A 20150427; KR 20160051301 A 20160427; TW 105111719 A 20160415; US 201615137095 A 20160425