EP 3089223 B1 20240501 - A SEMI-CONDUCTOR DEVICE
Title (en)
A SEMI-CONDUCTOR DEVICE
Title (de)
HALBLEITERVORRICHTUNG
Title (fr)
DISPOSITIF À SEMI-CONDUCTEUR
Publication
Application
Priority
IL 23836815 A 20150419
Abstract (en)
[origin: EP3089223A1] A semiconductor device is disclosed which includes: a superlattice layer and/or a layer of group III-V semiconductor materials; and a passivation structure comprising one or more layers wherein at least one layer of the passivation structure is a passivation layer grown in-situ in a crystallized form on top of the device layer, and at least one of the one or more layers of the passivation structure includes material having a high density of surface states which forces surface pinning of an equilibrium Fermi level within a certain band gap of the device layer, away from its conduction and valence bands. For instance, a photodetector (500) includes a photon absorbing layer (PAL), a barrier layer (BL), an in-situ passsivating structure (ISPS) and metal contacts (MC) electrically coupled to the barrier layer at exposed regions at which said passivation structure is absent. The absorbing layer and the barrier layer may be III-V superlattices.
IPC 8 full level
H01L 31/101 (2006.01)
CPC (source: EP US)
H01L 27/1462 (2013.01 - EP US); H01L 27/14629 (2013.01 - EP US); H01L 27/14634 (2013.01 - EP US); H01L 27/14636 (2013.01 - EP US); H01L 27/14649 (2013.01 - EP US); H01L 27/14685 (2013.01 - EP US); H01L 27/14689 (2013.01 - EP US); H01L 27/14698 (2013.01 - EP US); H01L 31/02161 (2013.01 - US); H01L 31/03046 (2013.01 - US); H01L 31/035236 (2013.01 - EP US); H01L 31/09 (2013.01 - US); H01L 31/101 (2013.01 - EP); H01L 31/108 (2013.01 - EP US); H01L 31/109 (2013.01 - US); H01L 31/1868 (2013.01 - EP US); Y02E 10/50 (2013.01 - US); Y02P 70/50 (2015.11 - EP US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
EP 3089223 A1 20161102; EP 3089223 B1 20240501; EP 3089223 C0 20240501; EP 4362112 A2 20240501; EP 4362112 A3 20240724; IL 238368 A0 20151130; IL 238368 B 20190829; US 10079262 B2 20180918; US 2016307956 A1 20161020; US 2017179185 A1 20170622; US 9613999 B2 20170404
DOCDB simple family (application)
EP 16165122 A 20160413; EP 24161336 A 20160413; IL 23836815 A 20150419; US 201615099492 A 20160414; US 201715442999 A 20170227