Global Patent Index - EP 3089224 A4

EP 3089224 A4 20170426 - AVALANCHE PHOTODIODE AND MANUFACTURING METHOD THEREFOR

Title (en)

AVALANCHE PHOTODIODE AND MANUFACTURING METHOD THEREFOR

Title (de)

LAWINENPHOTODIODE UND HERSTELLUNGSVERFAHREN DAFÜR

Title (fr)

PHOTODIODE À AVALANCHE ET SON PROCÉDÉ DE FABRICATION

Publication

EP 3089224 A4 20170426 (EN)

Application

EP 14882321 A 20140212

Priority

CN 2014071987 W 20140212

Abstract (en)

[origin: EP3089224A1] The present invention discloses an avalanche photodiode and a manufacturing method thereof, relates to the field of communications, and can resolve a problem that an existing avalanche photodiode has a relatively strong dark current. The avalanche photodiode includes: a GeOI substrate; an I-Ge absorption layer (31), configured to absorb an optical signal and generate a photo-generated carrier; a first p-type SiGe layer (23), a second p-type SiGe layer (24), a first SiGe layer (21), and a second SiGe layer (22), where a Si content in any one of the SiGe layers is less than or equal to 20%; a first SiO 2 oxidation layer (72) and a second SiO 2 oxidation layer (73); a first Taper type silicon Si waveguide layer (11) and a second Taper type silicon Si waveguide layer (12); a heavily-doped n-type silicon Si multiplication layer (13); and anode electrodes (61) and a cathode electrode (62).

IPC 8 full level

G02B 6/12 (2006.01); G02B 6/42 (2006.01); H01L 31/0232 (2014.01); H01L 31/028 (2006.01); H01L 31/0352 (2006.01); H01L 31/107 (2006.01)

CPC (source: EP US)

G02B 6/12004 (2013.01 - US); G02B 6/1228 (2013.01 - EP US); G02B 6/131 (2013.01 - US); G02B 6/4295 (2013.01 - US); H01L 31/022408 (2013.01 - US); H01L 31/02327 (2013.01 - EP US); H01L 31/028 (2013.01 - EP US); H01L 31/035281 (2013.01 - EP US); H01L 31/107 (2013.01 - US); H01L 31/1075 (2013.01 - EP US); H01L 31/18 (2013.01 - US); H01L 31/1804 (2013.01 - US); G02B 2006/12061 (2013.01 - EP US); G02B 2006/12123 (2013.01 - EP US); Y02E 10/547 (2013.01 - US)

Citation (search report)

  • [A] CN 102916071 A 20130206 - HUAWEI TECH CO LTD, et al
  • [A] ALAN P. MORRISON ET AL: "Progress towards photon counting between 1 µm and 1.6 µm using silicon with infrared absorbers", PROCEEDINGS OF SPIE, vol. 7681, 21 April 2010 (2010-04-21), pages 76810N - 1, XP055140000, ISSN: 0277-786X, DOI: 10.1117/12.851875
  • [A] ZHIHONG HUANG ET AL: "Effectiveness of SiGe Buffer Layers in Reducing Dark Currents of Ge-on-Si Photodetectors", IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE SERVICE CENTER, PISCATAWAY, NJ, USA, vol. 43, no. 3, 1 March 2007 (2007-03-01), pages 238 - 242, XP011163547, ISSN: 0018-9197, DOI: 10.1109/JQE.2006.890395
  • [A] DONGHWAN AHN ET AL: "Evanescent Coupling Device Design for Waveguide-Integrated Group IV Photodetectors", JOURNAL OF LIGHTWAVE TECHNOLOGY, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 28, no. 23, 1 December 2010 (2010-12-01), pages 3387 - 3394, XP011339957, ISSN: 0733-8724, DOI: 10.1109/JLT.2010.2086433
  • [T] JIFENG LIU: "Monolithically Integrated Ge-on-Si Active Photonics", PHOTONICS, vol. 1, no. 3, 2 July 2014 (2014-07-02), pages 162 - 197, XP055353773, DOI: 10.3390/photonics1030162
  • See references of WO 2015120583A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

EP 3089224 A1 20161102; EP 3089224 A4 20170426; EP 3089224 B1 20181212; CN 105247691 A 20160113; CN 105247691 B 20170329; ES 2713384 T3 20190521; US 2016351743 A1 20161201; US 9705023 B2 20170711; WO 2015120583 A1 20150820

DOCDB simple family (application)

EP 14882321 A 20140212; CN 2014071987 W 20140212; CN 201480000097 A 20140212; ES 14882321 T 20140212; US 201615234256 A 20160811