EP 3102539 A1 20161214 - PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON
Title (en)
PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON
Title (de)
VERFAHREN ZUR HERSTELLUNG VON POLYKRISTALLINEM SILICIUM
Title (fr)
PROCÉDÉ DE PREPARATION DE SILICIUM POLYCRISTALLIN
Publication
Application
Priority
- DE 102014201893 A 20140203
- EP 2015051284 W 20150122
Abstract (en)
[origin: WO2015113894A1] The invention relates to a method for producing polycrystalline silicon. A reaction gas containing a silicon-containing component and hydrogen is introduced into a reactor which comprises at least one support body made of silicon, said support body being heated by a direct passage of current. The silicon-containing component is decomposed, and polycrystalline silicon is deposited on the at least one support body. The invention is characterized in that the at least one support body made of silicon has an oxide layer which is removed before starting to deposit the polycrystalline silicon on the at least one support body, and the at least one support body is heated to a temperature of 1100-1200 °C and exposed to an atmosphere containing hydrogen at a pressure of 0.1 to 5 bar, wherein a flushing gas containing hydrogen is introduced into the reactor.
IPC 8 full level
C01B 33/035 (2006.01); C23C 16/24 (2006.01); C23C 16/44 (2006.01); H01L 21/02 (2006.01)
CPC (source: EP KR US)
C01B 33/035 (2013.01 - EP KR US); C23C 16/24 (2013.01 - US); C23C 16/4408 (2013.01 - US); C01P 2002/90 (2013.01 - KR); H01L 21/02532 (2013.01 - US); H01L 21/02595 (2013.01 - US); H01L 21/0262 (2013.01 - US)
Citation (search report)
See references of WO 2015113894A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2015113894 A1 20150806; CA 2938453 A1 20150806; CA 2938453 C 20180102; CN 105980304 A 20160928; CN 105980304 B 20180209; DE 102014201893 A1 20150806; EP 3102539 A1 20161214; JP 2017504557 A 20170209; JP 6250827 B2 20171220; KR 101895700 B1 20180905; KR 20160117589 A 20161010; MY 176276 A 20200727; TW 201531602 A 20150816; TW I546426 B 20160821; US 10150675 B2 20181211; US 2017001869 A1 20170105
DOCDB simple family (application)
EP 2015051284 W 20150122; CA 2938453 A 20150122; CN 201580007116 A 20150122; DE 102014201893 A 20140203; EP 15701014 A 20150122; JP 2016548356 A 20150122; KR 20167024386 A 20150122; MY PI2016001342 A 20150122; TW 104102178 A 20150123; US 201515116251 A 20150122