Global Patent Index - EP 3103152 A1

EP 3103152 A1 20161214 - DEEP METAL DEPOSITION IN A POROUS MATRIX BY HIGH POWER IMPULSE MAGNETRON SPUTTERING (HIPIMS), POROUS SUBSTRATES IMPREGNATED WITH METAL CATALYST AND USES THEREOF

Title (en)

DEEP METAL DEPOSITION IN A POROUS MATRIX BY HIGH POWER IMPULSE MAGNETRON SPUTTERING (HIPIMS), POROUS SUBSTRATES IMPREGNATED WITH METAL CATALYST AND USES THEREOF

Title (de)

TIEFE METALLABSCHEIDUNG IN EINER PORÖSEN MATRIX DURCH HOCHLEISTUNGSIMPULSMAGNETRONSPUTTERING, MIT METALLKATALYSATOR IMPRÄGNIERTE PORÖSE SUBSTRATE UND VERWENDUNGEN DAVON

Title (fr)

DEPOT METALLIQUE PROFOND DANS UNE MATRICE POREUSE PAR PULVERISATION MAGNETRON PULSEE HAUTE PUISSANCE HiPIMS, SUBSTRATS POREUX IMPREGNES DE CATALYSEUR METALLIQUE ET LEURS UTILISATIONS

Publication

EP 3103152 A1 20161214 (FR)

Application

EP 15704254 A 20150203

Priority

  • FR 1400306 A 20140203
  • EP 2015052207 W 20150203

Abstract (en)

[origin: WO2015114168A1] The invention concerns porous substrates impregnated with metal catalyst, in particular intended for use as electrodes in a fuel cell such as a proton exchange membrane cell, and method for preparing same. In particular, the present invention concerns a method for impregnating a porous substrate with metal catalyst by high power impulse magnetron sputtering of one or more metal targets, the target(s) and the substrate being placed in an enclosure containing a gaseous plasma medium, the metal of the target(s) being chosen from the transition metals and the alloys of same, said method comprising the following steps: a) applying a pulsed voltage Ut to the target, b) polarising the porous substrate by applying a pulsed voltage Us with a delay Δt relative to the start of step (a).

IPC 8 full level

H01M 4/86 (2006.01); C23C 14/16 (2006.01); C23C 14/35 (2006.01); G01N 27/16 (2006.01); G01N 33/00 (2006.01); H01M 4/88 (2006.01); H01M 4/90 (2006.01); H01M 8/10 (2006.01)

CPC (source: EP)

C23C 14/046 (2013.01); C23C 14/165 (2013.01); C23C 14/3485 (2013.01); C23C 14/35 (2013.01); H01M 4/8642 (2013.01); H01M 4/8871 (2013.01); H01M 4/9058 (2013.01); H01M 8/1007 (2016.02); G01N 27/16 (2013.01); Y02E 60/50 (2013.01)

Citation (search report)

See references of WO 2015114168A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

WO 2015114168 A1 20150806; EP 3103152 A1 20161214; FR 3017135 A1 20150807; FR 3017135 B1 20160219

DOCDB simple family (application)

EP 2015052207 W 20150203; EP 15704254 A 20150203; FR 1400306 A 20140203