EP 3120391 A1 20170125 - PHOTOACTIVE SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A PHOTOACTIVE SEMICONDUCTOR COMPONENT
Title (en)
PHOTOACTIVE SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A PHOTOACTIVE SEMICONDUCTOR COMPONENT
Title (de)
PHOTOAKTIVES HALBLEITERBAUELEMENT SOWIE VERFAHREN ZUM HERSTELLEN EINES PHOTOAKTIVEN HALBLEITERBAUELEMENTES
Title (fr)
COMPOSANT SEMI-CONDUCTEUR PHOTOSENSIBLE ET PROCÉDÉ DE FABRICATION D'UN COMPOSANT SEMI-CONDUCTEUR PHOTOSENSIBLE
Publication
Application
Priority
- DE 102014205350 A 20140321
- EP 2015054773 W 20150306
Abstract (en)
[origin: WO2015139975A1] The invention relates to a photoactive semiconductor component, especially a photovoltaic solar cell, having a semiconductor substrate (1), a carbon-containing SiC layer (3) disposed indirectly upon a surface of the semiconductor substrate, and a passivating intermediate layer (2) disposed indirectly or directly between the SiC layer and semiconductor substrate, and a metallic contact connection disposed indirectly or directly upon a side of the SiC layer facing away from the passivating intermediate layer and in electrically conductive connection with the SiC layer, where the SiC layer has p-type or n-type doping, which is characterized in that the SiC layer partly has a partly amorphous structure and partly has a crystalline structure.
IPC 8 full level
H01L 31/0312 (2006.01); H01L 31/0376 (2006.01); H01L 31/0745 (2012.01); H01L 31/0747 (2012.01); H01L 31/20 (2006.01)
CPC (source: EP US)
H01L 31/02167 (2013.01 - US); H01L 31/0288 (2013.01 - US); H01L 31/0312 (2013.01 - EP US); H01L 31/03682 (2013.01 - US); H01L 31/03765 (2013.01 - EP US); H01L 31/0745 (2013.01 - EP US); H01L 31/0747 (2013.01 - EP US); H01L 31/1812 (2013.01 - US); H01L 31/182 (2013.01 - US); H01L 31/1868 (2013.01 - US); H01L 31/1872 (2013.01 - US); H01L 31/204 (2013.01 - EP US); H01L 31/208 (2013.01 - EP US); Y02E 10/546 (2013.01 - EP); Y02E 10/548 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)
Citation (search report)
See references of WO 2015139975A1
Citation (examination)
C-K JUNG ET AL: "Hydrogenated amorphous and crystalline SiC thin films grown by RF-PECVD and thermal MOCVD; comparative study of structural and optical properties", SURFACE AND COATINGS TECHNOLOGY, ELSEVIER BV, AMSTERDAM, NL, vol. 171, no. 1-3, 1 July 2003 (2003-07-01), pages 46 - 50, XP001599005, ISSN: 0257-8972, DOI: 10.1016/S0257-8972(03)00234-2
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2015139975 A1 20150924; DE 102014205350 A1 20150924; DE 102014205350 B4 20210909; EP 3120391 A1 20170125; US 2017018662 A1 20170119
DOCDB simple family (application)
EP 2015054773 W 20150306; DE 102014205350 A 20140321; EP 15708220 A 20150306; US 201515124161 A 20150306