EP 3123239 B1 20230531 - MOS CAPACITOR OPTICAL MODULATOR WITH TRANSPARENT CONDUCTIVE AND LOW-REFRACTIVE-INDEX GATE
Title (en)
MOS CAPACITOR OPTICAL MODULATOR WITH TRANSPARENT CONDUCTIVE AND LOW-REFRACTIVE-INDEX GATE
Title (de)
OPTISCHER MODULATOR EINES MOS-KONDENSATORS MIT TRANSPARENTEM LEITFÄHIGEM GATE MIT NIEDRIGEM BRECHUNGSINDEX
Title (fr)
MODULATEUR OPTIQUE DE CONDENSATEUR MOS DOTÉ DE GRILLE TRANSPARENTE CONDUCTRICE ET À FAIBLE INDICE DE RÉFRACTION
Publication
Application
Priority
- US 201461981517 P 20140418
- US 201461984961 P 20140428
- US 2015026386 W 20150417
Abstract (en)
[origin: US2015301363A1] A metal-oxide semiconductor (MOS) optical modulator including a doped semiconductor layer having a waveguide structure, a dielectric layer disposed over the waveguide structure of the doped semiconductor layer, a gate region disposed over the dielectric layer, wherein the gate region comprises a transparent electrically conductive material having a refractive index lower than that of silicon, and a metal contact disposed over the gate region. The metal contact, the gate region, and the waveguide structure of the doped semiconductor layer may be vertically aligned with each other.
IPC 8 full level
G02F 1/025 (2006.01); G02B 6/12 (2006.01)
CPC (source: CN EP US)
G02B 6/13 (2013.01 - CN US); G02F 1/015 (2013.01 - CN); G02F 1/025 (2013.01 - CN EP US); H01L 29/0649 (2013.01 - CN US); H01L 29/167 (2013.01 - CN US); H01L 29/4966 (2013.01 - CN US); H01L 29/51 (2013.01 - CN US); H01L 29/518 (2013.01 - CN US); H01L 29/66181 (2013.01 - CN US); H01L 29/94 (2013.01 - CN US); G02B 6/12004 (2013.01 - EP US); G02B 2006/12061 (2013.01 - CN US); G02B 2006/12142 (2013.01 - CN US); G02F 1/0151 (2021.01 - CN EP US)
Citation (examination)
- US 2010215309 A1 20100826 - SHUBIN IVAN [US], et al
- US 8213751 B1 20120703 - HO SENG-TIONG [US], et al
- US 5237629 A 19930817 - HIETALA VINCENT M [US], et al
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
US 10133098 B2 20181120; US 2015301363 A1 20151022; CN 106170865 A 20161130; CN 106170865 B 20191101; CN 110824729 A 20200221; EP 3123239 A1 20170201; EP 3123239 B1 20230531; JP 2017518538 A 20170706; WO 2015161207 A1 20151022
DOCDB simple family (application)
US 201514689601 A 20150417; CN 201580018242 A 20150417; CN 201911019789 A 20150417; EP 15719131 A 20150417; JP 2017506638 A 20150417; US 2015026386 W 20150417