EP 3127161 A1 20170208 - METHOD FOR PRODUCING A DIELECTRIC MAGNETO RESISTOR IN A SUBSTRATE TRENCH, A CORRESPONDING SUBSTRATE, AND A POWER TRANSISTOR
Title (en)
METHOD FOR PRODUCING A DIELECTRIC MAGNETO RESISTOR IN A SUBSTRATE TRENCH, A CORRESPONDING SUBSTRATE, AND A POWER TRANSISTOR
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER DIELEKTRISCHEN FELDPLATTE IN EINEM GRABEN EINES SUBSTRATS, ENTSPRECHENDE SUBSTRAT UND LEISTUNGSTRANSISTOR
Title (fr)
PROCÉDÉ DE FORMATION D'UNE PLAQUE DE CHAMP DIÉLECTRIQUE DANS UNE TRANCHÉE D'UN SUBSTRAT, SUBSTRAT CORRESPONDANT ET TRANSISTOR DE PUISSANCE
Publication
Application
Priority
- DE 102014206361 A 20140403
- EP 2015054821 W 20150309
Abstract (en)
[origin: WO2015150023A1] Substrates comprising a trench with walls and a base are increasingly used for standard components. The invention relates to a substrate characterised in that it comprises a dielectric magneto resistor (83) consisting of at least one first dielectric layer, which only adjoins the lower sections of the trench walls and the base of said trench (60). Parasitic capacitances can be reduced when using this substrate for power transistors.
IPC 8 full level
H01L 21/336 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP US)
H01L 29/1095 (2013.01 - EP US); H01L 29/1608 (2013.01 - EP US); H01L 29/407 (2013.01 - US); H01L 29/41766 (2013.01 - EP US); H01L 29/4236 (2013.01 - EP US); H01L 29/42368 (2013.01 - EP US); H01L 29/66068 (2013.01 - EP US); H01L 29/66734 (2013.01 - US); H01L 29/7813 (2013.01 - EP US)
Citation (search report)
See references of WO 2015150023A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
DE 102014206361 A1 20151008; EP 3127161 A1 20170208; JP 2017516298 A 20170615; US 2017117369 A1 20170427; US 9972690 B2 20180515; WO 2015150023 A1 20151008
DOCDB simple family (application)
DE 102014206361 A 20140403; EP 15708232 A 20150309; EP 2015054821 W 20150309; JP 2016560779 A 20150309; US 201515300524 A 20150309