Global Patent Index - EP 3140849 A4

EP 3140849 A4 20181205 - SCANNING ELECTRON MICROSCOPE AND METHODS OF INSPECTING AND REVIEWING SAMPLES

Title (en)

SCANNING ELECTRON MICROSCOPE AND METHODS OF INSPECTING AND REVIEWING SAMPLES

Title (de)

RASTERELEKTRONENMIKROSKOP UND VERFAHREN ZUR ÜBERPRÜFUNG UND DURCHSICHT VON PROBEN

Title (fr)

MICROSCOPE ÉLECTRONIQUE À BALAYAGE ET PROCÉDÉS D'INSPECTION ET D'EXAMEN D'ÉCHANTILLONS

Publication

EP 3140849 A4 20181205 (EN)

Application

EP 15835724 A 20150828

Priority

  • US 201462043410 P 20140829
  • US 201514834991 A 20150825
  • US 2015047307 W 20150828

Abstract (en)

[origin: WO2016033388A1] A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such an unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

IPC 8 full level

G01T 1/24 (2006.01); H01J 37/244 (2006.01); H01J 37/28 (2006.01); H01L 27/146 (2006.01)

CPC (source: CN EP IL KR US)

G01N 30/72 (2013.01 - IL US); G01T 1/24 (2013.01 - EP IL US); G06T 1/00 (2013.01 - KR); H01J 37/244 (2013.01 - CN EP IL KR US); H01J 37/28 (2013.01 - CN EP IL KR US); H01J 49/02 (2013.01 - IL US); H01L 27/1464 (2013.01 - EP IL US); H01L 27/14659 (2013.01 - EP IL US); H01L 27/14661 (2013.01 - EP IL US); H01L 31/00 (2013.01 - IL KR US); H01J 2237/2441 (2013.01 - CN EP IL KR US); H01J 2237/2446 (2013.01 - CN EP IL KR US); H01J 2237/24475 (2013.01 - CN EP IL KR US); H01J 2237/24495 (2013.01 - CN EP IL KR US); H01J 2237/24592 (2013.01 - CN EP IL KR US)

Citation (search report)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

WO 2016033388 A1 20160303; CN 106575594 A 20170419; CN 106575594 B 20190528; CN 110164745 A 20190823; CN 110164745 B 20201027; EP 3140849 A1 20170315; EP 3140849 A4 20181205; EP 3140849 B1 20210721; IL 249503 A0 20170228; IL 249503 B 20210131; IL 279706 A 20210131; IL 279706 B 20210930; JP 2017526142 A 20170907; JP 2019197733 A 20191114; JP 6549220 B2 20190724; JP 6763065 B2 20200930; KR 102302636 B1 20210914; KR 20170047244 A 20170504; TW 201621963 A 20160616; TW 201921408 A 20190601; TW I660392 B 20190521; TW I695405 B 20200601; US 10466212 B2 20191105; US 2016064184 A1 20160303; US 2017329025 A1 20171116; US 9767986 B2 20170919

DOCDB simple family (application)

US 2015047307 W 20150828; CN 201580042995 A 20150828; CN 201910348546 A 20150828; EP 15835724 A 20150828; IL 24950316 A 20161212; IL 27970620 A 20201223; JP 2017511732 A 20150828; JP 2019118348 A 20190626; KR 20177005215 A 20150828; TW 104128484 A 20150828; TW 108106178 A 20150828; US 201514834991 A 20150825; US 201715667500 A 20170802