EP 3146093 A1 20170329 - GROUP III NITRIDE BULK CRYSTALS AND THEIR FABRICATION METHOD
Title (en)
GROUP III NITRIDE BULK CRYSTALS AND THEIR FABRICATION METHOD
Title (de)
GRUPPE-III-NITRID-MASSENKRISTALLE UND DEREN HERSTELLUNGSVERFAHREN
Title (fr)
CRISTAUX MASSIFS DE NITRURE DU GROUPE III ET LEUR PROCÉDÉ DE FABRICATION
Publication
Application
Priority
- US 201462002488 P 20140523
- US 2015032330 W 20150524
Abstract (en)
[origin: WO2015179852A1] In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Gax1Aly1In1-x1-y1N (0≤x1≤1, 0<x1+y1≤1) and the seed crystal is expressed as Gax2Aly2In1-x2-y2N (0≤x2≤1, 0≤x2+y2≤1). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided.
IPC 8 full level
C30B 7/10 (2006.01); C30B 29/40 (2006.01)
CPC (source: EP)
C30B 7/105 (2013.01); C30B 29/406 (2013.01)
Citation (search report)
See references of WO 2015179852A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
DOCDB simple family (application)
US 2015032330 W 20150524; EP 15727806 A 20150524