EP 3149738 A1 20170405 - CROSS-COUPLED THYRISTOR SRAM CIRCUITS AND METHODS OF OPERATION
Title (en)
CROSS-COUPLED THYRISTOR SRAM CIRCUITS AND METHODS OF OPERATION
Title (de)
KREUZGEKOPPELTE THYRISTOR-SRAM-SCHALTUNGEN UND VERFAHREN ZUM BETRIEB
Title (fr)
CIRCUITS DE SRAM À THYRISTOR À COUPLAGE TRANSVERSAL ET PROCÉDÉS DE FONCTIONNEMENT
Publication
Application
Priority
- US 201462055582 P 20140925
- US 2015052468 W 20150925
Abstract (en)
[origin: WO2016049581A1] A memory cell based upon thyristors for an SRAM integrated circuit is described together with a process for fabricating it. The memory cell can be implemented in different combinations of MOS and bipolar select transistors, or without select transistors, with thyristors in a semiconductor substrate with shallow trench isolation. Standard CMOS process technology can be used to manufacture the SRAM. Special circuitry provides lowered power consumption during standby.
IPC 8 full level
G11C 11/00 (2006.01); G11C 7/12 (2006.01); G11C 11/34 (2006.01); G11C 11/411 (2006.01); G11C 11/419 (2006.01); H10B 10/00 (2023.01)
CPC (source: EP US)
G11C 11/39 (2013.01 - EP US); G11C 11/4113 (2013.01 - EP US); G11C 11/4116 (2013.01 - EP US); G11C 11/416 (2013.01 - EP US); G11C 11/419 (2013.01 - EP US); H01L 21/8249 (2013.01 - EP US); H01L 27/0623 (2013.01 - EP US); H10B 10/10 (2023.02 - EP US); H01L 29/7404 (2013.01 - EP US); H01L 29/7436 (2013.01 - EP US); H10B 10/00 (2023.02 - EP US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2016049581 A1 20160331; CN 106170832 A 20161130; CN 106537507 A 20170322; CN 106537507 B 20180619; EP 3149738 A1 20170405; EP 3149738 A4 20180124; EP 3149739 A1 20170405; EP 3149739 A4 20170628; US 2016093367 A1 20160331; US 2016093607 A1 20160331; US 2017148782 A1 20170525; US 9449669 B2 20160920; US 9564198 B2 20170207; US 9748223 B2 20170829; WO 2016049590 A1 20160331
DOCDB simple family (application)
US 2015052468 W 20150925; CN 201580010862 A 20150925; CN 201580011000 A 20150925; EP 15844473 A 20150925; EP 15844494 A 20150925; US 2015052480 W 20150925; US 201514590834 A 20150106; US 201514740197 A 20150615; US 201715426888 A 20170207