Global Patent Index - EP 3149740 A4

EP 3149740 A4 20171101 - THYRISTOR VOLATILE RANDOM ACCESS MEMORY AND METHODS OF MANUFACTURE

Title (en)

THYRISTOR VOLATILE RANDOM ACCESS MEMORY AND METHODS OF MANUFACTURE

Title (de)

FLÜCHTIGER THYRISTOR-DIREKTZUGRIFFSSPEICHER UND VERFAHREN ZUR HERSTELLUNG

Title (fr)

MÉMOIRE VOLATILE À ACCÉS ALÉATOIRE POURVUE D'UN THYRISTOR, ET PROCÉDÉS DE FABRICATION

Publication

EP 3149740 A4 20171101 (EN)

Application

EP 15845023 A 20150925

Priority

  • US 201462055582 P 20140925
  • US 201514590834 A 20150106
  • US 201562186336 P 20150629
  • US 2015052499 W 20150925

Abstract (en)

[origin: WO2016049601A1] A volatile memory array using vertical thyristors is disclosed together with methods of fabricating the array.

IPC 8 full level

G11C 11/39 (2006.01); G11C 11/402 (2006.01); H01L 27/102 (2006.01); H01L 29/87 (2006.01); G11C 11/406 (2006.01)

CPC (source: CN EP US)

G06F 11/1048 (2013.01 - EP); G11C 11/39 (2013.01 - CN EP); G11C 11/4026 (2013.01 - EP); G11C 11/4067 (2013.01 - EP); G11C 11/408 (2013.01 - EP); G11C 11/4094 (2013.01 - EP); H01L 21/76 (2013.01 - EP); H01L 21/76224 (2013.01 - EP); H01L 29/66121 (2013.01 - EP); H01L 29/66363 (2013.01 - EP); H01L 29/87 (2013.01 - EP); H10B 12/10 (2023.02 - CN EP US); G11C 11/406 (2013.01 - EP)

Citation (search report)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

WO 2016049601 A1 20160331; EP 3149735 A1 20170405; EP 3149735 A4 20180613; EP 3149740 A1 20170405; EP 3149740 A4 20171101; EP 3149741 A1 20170405; EP 3149741 A4 20180117; WO 2016049606 A1 20160331; WO 2016049608 A1 20160331

DOCDB simple family (application)

US 2015052499 W 20150925; EP 15844478 A 20150925; EP 15844668 A 20150925; EP 15845023 A 20150925; US 2015052505 W 20150925; US 2015052507 W 20150925