EP 3169475 A1 20170524 - METHOD AND DEVICE FOR THE LASER-BASED WORKING OF TWO-DIMENSIONAL, CRYSTALLINE SUBSTRATES, IN PARTICULAR SEMICONDUCTOR SUBSTRATES
Title (en)
METHOD AND DEVICE FOR THE LASER-BASED WORKING OF TWO-DIMENSIONAL, CRYSTALLINE SUBSTRATES, IN PARTICULAR SEMICONDUCTOR SUBSTRATES
Title (de)
VERFAHREN UND VORRICHTUNG ZUM LASERBASIERTEN BEARBEITEN VON FLÄCHIGEN, KRISTALLINEN SUBSTRATEN, INSBESONDERE VON HALBLEITERSUBSTRATEN
Title (fr)
PROCÉDÉ ET DISPOSITIF D'USINAGE AU LASER DE SUBSTRATS PLATS CRISTALLINS, NOTAMMENT DE SUBSTRATS SEMICONDUCTEURS
Publication
Application
Priority
- DE 102014213775 A 20140715
- EP 2015065476 W 20150707
Abstract (en)
[origin: WO2016008768A1] The present invention relates to a method for the laser-based working of a two-dimensional, crystalline substrate in order to separate the substrate into a number of parts, in which the laser beam (2a, 2f) of a laser (3) for working the substrate (1) is directed onto the latter, in which an optical arrangement (6) positioned in the path of rays of the laser (3) is used to form from the laser beam (2a) radiated onto the optical arrangement (6), on the side on which the beam emerges from it, a laser beam focal area (2f) with an extent both along the direction of the beam (z) and in just one first direction (y) transverse to the direction of the beam (z) but not with an extent in a second direction (x) that is perpendicular both to the first direction (y) and to the direction of the beam (z), wherein the substrate (1) is positioned in relation to the laser beam focal area (2f) in such a way that the laser beam focal area (2f) produces an induced absorption inside the substrate (1) along an extended portion of the area (2c) of the substrate material, as a result of which induced cracks are formed in the substrate material along this extended portion of the area (2c).
IPC 8 full level
B23K 26/00 (2014.01); B23K 26/06 (2014.01); B23K 26/0622 (2014.01); B23K 26/073 (2006.01); B23K 101/40 (2006.01)
CPC (source: CN EP KR US)
B23K 26/0622 (2015.10 - CN EP KR US); B23K 26/0648 (2013.01 - CN EP KR US); B23K 26/0652 (2013.01 - CN EP KR US); B23K 26/066 (2015.10 - US); B23K 26/0732 (2013.01 - CN EP KR US); B23K 26/53 (2015.10 - CN EP KR US); B23K 2101/40 (2018.07 - CN EP KR US)
Citation (search report)
See references of WO 2016008768A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
DE 102014213775 A1 20160121; DE 102014213775 B4 20180215; CN 107073655 A 20170818; CN 107073655 B 20200114; EP 3169475 A1 20170524; EP 3169475 B1 20191204; ES 2774377 T3 20200720; JP 2017521877 A 20170803; JP 6804441 B2 20201223; KR 102318041 B1 20211027; KR 20170028426 A 20170313; LT 3169475 T 20200310; PT 3169475 T 20200313; TW 201613710 A 20160416; TW I688444 B 20200321; US 10821555 B2 20201103; US 2017157700 A1 20170608; WO 2016008768 A1 20160121
DOCDB simple family (application)
DE 102014213775 A 20140715; CN 201580049806 A 20150707; EP 15739207 A 20150707; EP 2015065476 W 20150707; ES 15739207 T 20150707; JP 2017522729 A 20150707; KR 20177003422 A 20150707; LT 15739207 T 20150707; PT 15739207 T 20150707; TW 104122499 A 20150713; US 201515325859 A 20150707