EP 3176813 A1 20170607 - SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Title (en)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Title (de)
HALBLEITERBAUELEMENT UND HERSTELLUNGSVERFAHREN DAFÜR
Title (fr)
DISPOSITIF À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
Publication
Application
Priority
CN 201510860803 A 20151201
Abstract (en)
A method for manufacturing a semiconductor device includes providing a substrate, forming an amorphous layer in the substrate, performing a first etching process on the substrate using the amorphous layer as an etch stop layer to form a plurality of first fins, performing a channel stop ion implantation process into the amorphous layer to form an impurity region, and performing an annealing process to activate implanted dopants in the impurity region, wherein the amorphous layer disappears during the annealing process. The method also includes performing a second etching process on a region of the substrate disposed between the first fins to form second fins from the first fins, and forming an isolation region between adjacent second fins by filling at least a portion of an air gap between the second fins with an insulating material. The method prevents dopants of the channel stop implant from diffusing into the channel.
IPC 8 full level
H01L 21/336 (2006.01)
CPC (source: CN EP US)
H01L 21/265 (2013.01 - CN); H01L 21/324 (2013.01 - CN); H01L 21/76224 (2013.01 - US); H01L 29/0653 (2013.01 - US); H01L 29/1083 (2013.01 - US); H01L 29/66537 (2013.01 - US); H01L 29/66795 (2013.01 - CN EP US); H01L 29/66803 (2013.01 - EP US); H01L 29/7851 (2013.01 - US); H01L 29/7855 (2013.01 - CN)
Citation (search report)
- [XAI] US 2013313619 A1 20131128 - FUMITAKE MIENO [CN]
- [X] US 2013105914 A1 20130502 - LIN CHIEN-TING [TW]
- [X] US 2006244051 A1 20061102 - IZUMIDA TAKASHI [JP], et al
- [A] WO 2015078104 A1 20150604 - INST OF MICROELECTRONICS CAS [CN] & US 2016268392 A1 20160915 - ZHU HUILONG [US]
- [A] US 2010248454 A1 20100930 - MASZARA WITOLD [US], et al
- [A] US 2009072276 A1 20090319 - INABA SATOSHI [JP]
- [XI] TAKAHASHI K ET AL: "FinFETs with both large body factor and high drive-current", SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, 2007 INTERNATIONAL, IEEE, PISCATAWAY, NJ, USA, 12 December 2007 (2007-12-12), pages 1 - 2, XP031225622, ISBN: 978-1-4244-1891-6
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 3176813 A1 20170607; CN 106816467 A 20170609; CN 106816467 B 20191008; US 10446648 B2 20191015; US 11575010 B2 20230207; US 2017154962 A1 20170601; US 2019393310 A1 20191226
DOCDB simple family (application)
EP 16199530 A 20161118; CN 201510860803 A 20151201; US 201615365825 A 20161130; US 201916562093 A 20190905