EP 3185295 A1 20170628 - SEMICONDUCTOR PACKAGE STRUCTURE BASED ON CASCADE CIRCUITS
Title (en)
SEMICONDUCTOR PACKAGE STRUCTURE BASED ON CASCADE CIRCUITS
Title (de)
AUF KASKADENSCHALTUNGEN BASIERENDE HALBLEITERGEHÄUSESTRUKTUR
Title (fr)
STRUCTURE DE BOÎTIER À SEMI-CONDUCTEUR À BASE DE CIRCUITS EN CASCADE
Publication
Application
Priority
CN 201510991622 A 20151225
Abstract (en)
A semiconductor package structure (300) comprises: a high-voltage depletion type semiconductor transistor (304) comprising a source electrode (306), a gate electrode (307) and a drain electrode (305); a low-voltage enhancement type semiconductor transistor (320) comprising a source electrode (308), a gate electrode (310) and a drain electrode (309); a shell (301) comprising a cavity (301-1), a high-voltage terminal (303), a first low-voltage terminal (330) and a second low-voltage terminal (331); and cascade circuits comprising a supporting sheet (302) having a conductive surface (302-1). The source electrode (306) of the high-voltage depletion type transistor (304) and the drain electrode (309) of the low-voltage enhancement type semiconductor transistor (320) are fixed to the conductive surface (302-1) of the supporting sheet (302) and electrically connected to each other. A side of the supporting sheet (302) away from the conductive surface (302-1) is fixed to the cavity (301-1) of the shell (301).
IPC 8 full level
H01L 27/088 (2006.01); H01L 23/495 (2006.01); H01L 25/065 (2006.01); H01L 25/16 (2006.01); H01L 29/78 (2006.01); H03K 17/567 (2006.01)
CPC (source: CN EP US)
H01L 23/057 (2013.01 - US); H01L 23/3735 (2013.01 - EP US); H01L 23/481 (2013.01 - CN); H01L 23/492 (2013.01 - CN); H01L 23/552 (2013.01 - CN US); H01L 23/642 (2013.01 - EP US); H01L 23/645 (2013.01 - EP US); H01L 23/647 (2013.01 - EP US); H01L 24/48 (2013.01 - EP US); H01L 25/0655 (2013.01 - EP US); H01L 25/072 (2013.01 - CN); H01L 29/16 (2013.01 - US); H01L 29/2003 (2013.01 - EP US); H01L 29/205 (2013.01 - US); H01L 29/7787 (2013.01 - US); H01L 29/7805 (2013.01 - US); H01L 23/49562 (2013.01 - EP US); H01L 24/49 (2013.01 - EP US); H01L 25/16 (2013.01 - EP US); H01L 29/4175 (2013.01 - EP US); H01L 29/7786 (2013.01 - EP US); H01L 2224/04042 (2013.01 - EP US); H01L 2224/32225 (2013.01 - EP US); H01L 2224/48137 (2013.01 - EP US); H01L 2224/48195 (2013.01 - EP US); H01L 2224/48227 (2013.01 - EP US); H01L 2224/48247 (2013.01 - EP US); H01L 2224/48257 (2013.01 - EP US); H01L 2224/48265 (2013.01 - EP US); H01L 2224/49111 (2013.01 - EP US); H01L 2224/73267 (2013.01 - EP US); H01L 2924/00014 (2013.01 - EP US); H01L 2924/13055 (2013.01 - EP US); H01L 2924/13091 (2013.01 - EP US); H01L 2924/19041 (2013.01 - EP US); H01L 2924/19043 (2013.01 - EP US); H01L 2924/19104 (2013.01 - EP US); H01L 2924/3025 (2013.01 - US)
Citation (applicant)
US 2014167822 A1 20140619 - RUTTER PHILIP [GB], et al
Citation (search report)
- [YD] US 2014167822 A1 20140619 - RUTTER PHILIP [GB], et al
- [Y] US 2012273878 A1 20121101 - MALLIKARJUNASWAMY SHEKAR [US]
- [Y] JP 2004266139 A 20040924 - TOSHIBA CORP
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 3185295 A1 20170628; CN 105914192 A 20160831; CN 105914192 B 20190201; JP 2017118099 A 20170629; JP 6346643 B2 20180620; US 10163811 B2 20181225; US 2017186700 A1 20170629
DOCDB simple family (application)
EP 16186549 A 20160831; CN 201510991622 A 20151225; JP 2016190580 A 20160929; US 201615251594 A 20160830