EP 3191626 A1 20170719 - SUBSTRATES FOR GROWING GROUP III NITRIDE CRYSTALS AND THEIR FABRICATION METHOD
Title (en)
SUBSTRATES FOR GROWING GROUP III NITRIDE CRYSTALS AND THEIR FABRICATION METHOD
Title (de)
SUBSTRATE ZUR ZÜCHTUNG VON GRUPPE-III-NITRID-KRISTALLEN UND DEREN HERSTELLUNGSVERFAHREN
Title (fr)
SUBSTRATS DE CROISSANCE DE CRISTAUX DE NITRURE DU GROUPE III ET LEUR PROCÉDÉ DE FABRICATION
Publication
Application
Priority
- US 201462049036 P 20140911
- US 2015049259 W 20150909
Abstract (en)
[origin: WO2016040533A1] In one instance, the invention provides a substrate for growing a thick layer of group III nitride. The substrate has a first surface prepared for epitaxial growth of group III nitride and a second surface, opposite to the first surface, having a plurality of grooves. The invention also provides a method of producing a thick layer or a bulk crystal of group III nitride using a grooved substrate. The grooved substrate in one configuration grows a thick layer or a bulk crystal of group III nitride with reduced bow and/or spontaneous separation from the substrate.
IPC 8 full level
C30B 23/02 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 33/00 (2006.01); H01L 21/20 (2006.01)
CPC (source: CN EP KR)
C30B 23/025 (2013.01 - CN EP KR); C30B 25/18 (2013.01 - CN EP KR); C30B 29/20 (2013.01 - CN); C30B 29/403 (2013.01 - CN EP KR); C30B 29/406 (2013.01 - CN); C30B 33/00 (2013.01 - CN EP KR); H01L 21/0243 (2013.01 - CN KR); H01L 21/02433 (2013.01 - CN KR); H01L 21/02458 (2013.01 - CN KR); H01L 21/0254 (2013.01 - CN KR); H01L 21/0243 (2013.01 - EP); H01L 21/02433 (2013.01 - EP); H01L 21/02458 (2013.01 - EP); H01L 21/0254 (2013.01 - EP)
Citation (search report)
See references of WO 2016040533A1
Citation (examination)
KR 20000066759 A 20001115 - LG ELECTRONICS INC [KR]
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2016040533 A1 20160317; CN 107075719 A 20170818; EP 3191626 A1 20170719; JP 2017530081 A 20171012; KR 20170036055 A 20170331
DOCDB simple family (application)
US 2015049259 W 20150909; CN 201580048863 A 20150909; EP 15767399 A 20150909; JP 2017514313 A 20150909; KR 20177005240 A 20150909