EP 3193358 B1 20210331 - SEMICONDUCTOR ELEMENT CLEANING SOLUTION THAT SUPPRESSES DAMAGE TO TUNGSTEN-CONTAINING MATERIALS, AND METHOD FOR CLEANING SEMICONDUCTOR ELEMENT USING SAME
Title (en)
SEMICONDUCTOR ELEMENT CLEANING SOLUTION THAT SUPPRESSES DAMAGE TO TUNGSTEN-CONTAINING MATERIALS, AND METHOD FOR CLEANING SEMICONDUCTOR ELEMENT USING SAME
Title (de)
REINIGUNGSLÖSUNG FÜR EIN HALBLEITERELEMENT ZUR UNTERDRÜCKUNG VON SCHÄDEN AN WOLFRAMHALTIGEN MATERIALIEN UND VERFAHREN ZUM REINIGEN EINES HALBLEITERELEMENTS DAMIT
Title (fr)
LIQUIDE DE NETTOYAGE POUR ÉLÉMENT SEMI-CONDUCTEUR INHIBANT LES DOMMAGES SUR DES MATÉRIAUX CONTENANT DU TUNGSTÈNE, ET PROCÉDÉ DE NETTOYAGE D'ÉLÉMENT SEMI-CONDUCTEUR METTANT EN UVRE CELUI-CI
Publication
Application
Priority
- JP 2014230634 A 20141113
- JP 2015078075 W 20151002
Abstract (en)
[origin: EP3193358A1] According to the present invention, it is possible to provide a cleaning solution which removes a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains 0.001-5 mass % of an alkaline earth metal compound, 0.1-30 mass % of an inorganic alkali and/or an organic alkali, and water.
IPC 8 full level
H01L 21/311 (2006.01); G03F 7/42 (2006.01)
CPC (source: EP IL KR US)
C11D 3/30 (2013.01 - IL US); C11D 3/43 (2013.01 - IL US); C11D 7/04 (2013.01 - EP IL US); C11D 7/06 (2013.01 - EP IL KR US); C11D 7/12 (2013.01 - EP IL KR US); C11D 7/32 (2013.01 - EP IL US); C11D 7/3209 (2013.01 - IL KR); C11D 17/08 (2013.01 - EP IL KR US); C22C 38/12 (2013.01 - IL); G03F 7/422 (2013.01 - IL US); G03F 7/425 (2013.01 - IL US); H01L 21/02041 (2013.01 - IL US); H01L 21/02052 (2013.01 - IL KR); H01L 21/304 (2013.01 - IL US); H01L 21/31133 (2013.01 - EP IL US); C11D 2111/22 (2024.01 - IL KR US); C22C 38/12 (2013.01 - EP US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
EP 3193358 A1 20170719; EP 3193358 A4 20180502; EP 3193358 B1 20210331; CN 106796878 A 20170531; CN 106796878 B 20210209; IL 252098 A0 20170731; IL 252098 B 20210228; JP 6555273 B2 20190807; JP WO2016076031 A1 20170824; KR 102405637 B1 20220607; KR 20170085483 A 20170724; TW 201624152 A 20160701; TW I678601 B 20191201; US 10651028 B2 20200512; US 2017278701 A1 20170928; WO 2016076031 A1 20160519
DOCDB simple family (application)
EP 15858444 A 20151002; CN 201580055599 A 20151002; IL 25209817 A 20170504; JP 2015078075 W 20151002; JP 2016558927 A 20151002; KR 20177008611 A 20151002; TW 104132919 A 20151007; US 201515505654 A 20151002