Title (en)

METHOD FOR PRODUCING A VERTICAL ORGANIC FIELD EFFECT TRANSISTOR AND VERTICAL ORGANIC FIELD EFFECT TRANSISTOR

Title (de)

VERFAHREN ZUM HERSTELLEN EINES VERTIKALEN ORGANISCHEN FELDEFFEKTTRANSISTORS UND VERTIKALER ORGANISCHER FELDEFFEKTTRANSISTOR

Title (fr)

PROCÉDÉ DE FABRICATION D'UN TRANSISTOR À EFFET DE CHAMP ORGANIQUE VERTICAL ET TRANSISTOR À EFFET DE CHAMP ORGANIQUE VERTICAL

Publication

EP 3200253 B1 20210630 (DE)

Application

EP 16153391 A 20160129

Priority

EP 16153391 A 20160129

Abstract (en)

[origin: US2017222166A1] The invention relates to a method for producing a vertical organic field-effect transistor, in which a vertical organic field-effect transistor with a layer arrangement is produced on a substrate, said layer arrangement including transistor electrodes, namely a first electrode (23; 24), a second electrode (23; 24) and a third electrode (32), electrically insulating layers (25; 34) and an organic semiconductor layer (28). In addition, a vertical organic field-effect transistor is provided, which includes a layer arrangement with transistor electrodes on a substrate (21).

IPC 8 full level

H10K 99/00 (2023.01)

CPC (source: CN EP US)

H10K 10/491 (2023.02 - CN EP US); H10K 10/84 (2023.02 - CN US); H10K 71/221 (2023.02 - EP US); H10K 71/231 (2023.02 - US); H10K 71/13 (2023.02 - EP US); H10K 71/621 (2023.02 - CN)

Citation (examination)

• US 2006148167 A1 20060706 - BROWN THOMAS M [GB], et al
• US 2007090362 A1 20070426 - AHN TAEK [KR], et al
• US 2009286361 A1 20091119 - KAWASHIMA NORIYUKI [JP]

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

EP 3200253 A1 20170802; EP 3200253 B1 20210630; CN 107026236 A 20170808; CN 107026236 B 20220415; US 10170715 B2 20190101; US 2017222166 A1 20170803

DOCDB simple family (application)

EP 16153391 A 20160129; CN 201710163841 A 20170203; US 201715418254 A 20170127