Global Patent Index - EP 3214045 B1

EP 3214045 B1 20201125 - VANADIUM OXIDE FILM AND PROCESS FOR PRODUCING SAME

Title (en)

VANADIUM OXIDE FILM AND PROCESS FOR PRODUCING SAME

Title (de)

VANADIUMOXIDFOLIE UND VERFAHREN ZUR HERSTELLUNG DAVON

Title (fr)

FILM D'OXYDE DE VANADIUM ET SON PROCÉDÉ DE PRODUCTION

Publication

EP 3214045 B1 20201125 (EN)

Application

EP 15855099 A 20151026

Priority

  • JP 2014218176 A 20141027
  • JP 2015080110 W 20151026

Abstract (en)

[origin: EP3214045A1] Provided is a vanadium oxide film which shows substantially no hysteresis of resistivity changes due to temperature rising/falling, has a low resistivity at room temperature, has a large absolute value of the temperature coefficient of resistance, and shows semiconductor-like resistance changes in a wide temperature range. In the vanadium oxide film, a portion of the vanadium has been replaced by aluminum and copper, and the amount of substance of aluminum is 10 mol% based on the sum total of the amount of substance of vanadium, the amount of substance of aluminum, and the amount of substance of copper. This vanadium oxide film has a low resistivity, has a large absolute value of the temperature coefficient of resistance, and shows substantially no hysteresis of resistivity changes due to temperature rising/falling. This vanadium oxide film is produced by applying a mixture solution containing a vanadium organic compound, an aluminum organic compound, and a copper organic compound to a substrate, calcining the substrate at a temperature lower than the temperature at which the substrate decomposes, and irradiating the surface of the substrate onto which the mixture solution has been applied with ultraviolet light.

IPC 8 full level

C01G 53/00 (2006.01); C01G 31/00 (2006.01); C01G 49/00 (2006.01); H01L 21/368 (2006.01)

CPC (source: EP US)

C01G 31/00 (2013.01 - EP US); C01G 31/02 (2013.01 - US); C01G 49/00 (2013.01 - EP US); C01G 53/00 (2013.01 - EP US); H01L 21/02565 (2013.01 - EP US); H01L 21/02581 (2013.01 - EP US); H01L 21/02628 (2013.01 - EP US); G01J 5/0003 (2013.01 - US)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

EP 3214045 A1 20170906; EP 3214045 A4 20180620; EP 3214045 B1 20201125; JP 6437006 B2 20181212; JP WO2016068076 A1 20170914; US 10745289 B2 20200818; US 2017313595 A1 20171102; WO 2016068076 A1 20160506

DOCDB simple family (application)

EP 15855099 A 20151026; JP 2015080110 W 20151026; JP 2016556559 A 20151026; US 201515520339 A 20151026