EP 3218533 A1 20170920 - METHOD FOR MANUFACTURING AN N-TYPE MONOCRYSTALLINE SILICON INGOT
Title (en)
METHOD FOR MANUFACTURING AN N-TYPE MONOCRYSTALLINE SILICON INGOT
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES MONOKRISTALLINEN N-TYP-SILICIUM-BARREN
Title (fr)
PROCEDE DE FABRICATION D'UN LINGOT DE SILICIUM MONOCRISTALLIN DE TYPE N
Publication
Application
Priority
- FR 1460855 A 20141110
- EP 2015076101 W 20151109
Abstract (en)
[origin: WO2016075092A1] The present invention relates to a method for manufacturing an n-type monocrystalline silicon ingot, with monitored concentration of oxygen-based thermal donors, comprising at least the following steps: (i) providing a bath of molten silicon comprising one or more n-type doping agents, said bath being supplemented at least with germanium (Ge) and/or tin (Sn) with levels that are adapted such as to inhibit the formation of all or part of the thermal donors in the expected silicon ingot; and (ii) drawing the silicon ingot from the bath of step (i) by a Czochralski drawing method, the initial drawing speed V1 being reduced to a speed V2 = V1/b, wherein b is between 10 and 1.2, when the solidified silicon fraction fs reaches a predetermined critical value. The invention also relates to a monocrystalline silicon ingot obtained according to said method and to the use thereof for manufacturing a photovoltaic cell by a low-temperature method.
IPC 8 full level
C30B 15/02 (2006.01); C30B 15/20 (2006.01); C30B 29/06 (2006.01)
CPC (source: EP)
C30B 15/02 (2013.01); C30B 15/20 (2013.01); C30B 29/06 (2013.01); Y02E 10/547 (2013.01)
Citation (examination)
- JP S507557 B1 19750326
- DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; October 2012 (2012-10-01), TANAY F ET AL: "Effects of germanium doping on the boron-oxygen complex formation in silicon solar cells", Database accession no. 13605289 & PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS WILEY-VCH VERLAG GMBH GERMANY, vol. 9, no. 10-11, 19 September 2012 (2012-09-19), pages 1981 - 1986, ISSN: 1862-6351, DOI: 10.1002/PSSC.201200230
- DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; October 2002 (2002-10-01), ZHANG WEILIAN ET AL: "Micro-precipitation of oxygen in as-grown CZ Si of doping Ge", Database accession no. 7529903 & CHINESE JOURNAL OF SEMICONDUCTORS SCIENCE PRESS CHINA, vol. 23, no. 10, 1 January 2002 (2002-01-01), pages 1073 - 1077, ISSN: 0253-4177
- See also references of WO 2016075092A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
FR 3028266 A1 20160513; FR 3028266 B1 20161223; EP 3218533 A1 20170920; TW 201623703 A 20160701; WO 2016075092 A1 20160519
DOCDB simple family (application)
FR 1460855 A 20141110; EP 15804688 A 20151109; EP 2015076101 W 20151109; TW 104137062 A 20151110